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Part Details for FDC642P-F085P by onsemi
Results Overview of FDC642P-F085P by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
FDC642P-F085P Information
FDC642P-F085P by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDC642P-F085P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDC642P-F085P
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Avnet Americas | P-CHANNEL POWER MOSFET - Tape and Reel (Alt: FDC642P-F085P) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 5 Days Container: Reel | 15000 |
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$0.1761 | Buy Now |
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DISTI #
512-FDC642P_F085P
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Mouser Electronics | MOSFETs P-ChannelPowerMosfet RoHS: Compliant | 1165 |
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$0.1940 / $0.6600 | Buy Now |
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DISTI #
85955405
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Verical | Trans MOSFET P-CH 20V 4A 6-Pin TSOT-23 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 1852 Package Multiple: 1 Date Code: 2001 | Americas - 19232 |
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$0.1513 / $0.2025 | Buy Now |
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DISTI #
85955457
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Verical | Trans MOSFET P-CH 20V 4A 6-Pin TSOT-23 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 1852 Package Multiple: 1 Date Code: 2301 | Americas - 10065 |
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$0.1513 / $0.2025 | Buy Now |
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DISTI #
85955400
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Verical | Trans MOSFET P-CH 20V 4A 6-Pin TSOT-23 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 1852 Package Multiple: 1 Date Code: 2101 | Americas - 7312 |
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$0.1513 / $0.2025 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 20V, 0.065OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 5657 |
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$0.1313 / $0.3150 | Buy Now |
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Rochester Electronics | FDC642P_F085 - P-Channel PowerTrench MOSFET, -20V, -4A, 100m RoHS: Compliant Status: Obsolete Min Qty: 1 | 185251 |
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$0.1210 / $0.1952 | Buy Now |
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DISTI #
FDC642P-F085P
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Avnet Silica | PCHANNEL POWER MOSFET (Alt: FDC642P-F085P) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FDC642P-F085P
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EBV Elektronik | PCHANNEL POWER MOSFET (Alt: FDC642P-F085P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 85069 |
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RFQ |
Part Details for FDC642P-F085P
FDC642P-F085P CAD Models
FDC642P-F085P Part Data Attributes
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FDC642P-F085P
onsemi
Buy Now
Datasheet
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Compare Parts:
FDC642P-F085P
onsemi
P-Channel PowerTrench® MOSFET, -20V, -4A, 100mΩ, SSOT 6L, 3000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SSOT 6L | |
| Manufacturer Package Code | 419BL | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 25 Weeks, 5 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 72 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 1.2 W | |
| Power Dissipation-Max (Abs) | 1.2 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 53 ns | |
| Turn-on Time-Max (ton) | 23 ns |
FDC642P-F085P Frequently Asked Questions (FAQ)
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A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness and a thermal relief pattern are recommended to ensure good heat dissipation.
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Ensure that the device is operated within the recommended temperature range (–40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Avoid exceeding the maximum junction temperature (Tj) of 150°C.
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A drive strength of 2-4 mA is recommended for the gate driver to ensure reliable switching. Higher drive strengths may be required for high-frequency applications.
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Use a latch-up prevention circuit or a gate driver with built-in latch-up protection. Ensure that the device is operated within the recommended voltage range and avoid exceeding the maximum voltage rating.
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Use a human body model (HBM) ESD protection circuit with a minimum of 2 kV rating. Ensure that the ESD protection circuit is designed to protect the device from both positive and negative ESD events.