-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, TSOT-23-6, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDC602P by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
61M6203
|
Newark | Mosfet, P-Ch, 20 V, 5.5 A, Supersot-6, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:5.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:900Mv Rohs Compliant: Yes |Onsemi FDC602P RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1900 |
|
$0.1940 | Buy Now |
DISTI #
87K2062
|
Newark | P Channel Mosfet, -20V, 5.5A Super Sot-6, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:5.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Power Dissipation:1.6W Rohs Compliant: Yes |Onsemi FDC602P RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2190 / $0.2810 | Buy Now |
DISTI #
FDC602PCT-ND
|
DigiKey | MOSFET P-CH 20V 5.5A SUPERSOT6 Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
12117 In Stock |
|
$0.2090 / $0.8200 | Buy Now |
DISTI #
FDC602P
|
Avnet Americas | Trans MOSFET P-CH 20V 5.5A 6-Pin SuperSOT T/R - Tape and Reel (Alt: FDC602P) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
|
$0.1882 / $0.1951 | Buy Now |
DISTI #
512-FDC602P
|
Mouser Electronics | MOSFETs P-Ch PowerTrench Specified 2.5V RoHS: Compliant | 9881 |
|
$0.2200 / $0.7800 | Buy Now |
DISTI #
V36:1790_06298548
|
Arrow Electronics | Trans MOSFET P-CH 20V 5.5A 6-Pin TSOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks Date Code: 2422 | Americas - 3000 |
|
$0.2084 / $0.2242 | Buy Now |
|
Future Electronics | P-Channel 20 V 35 mohm 2.5 V PowerTrench Specified Mosfet SSOT-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks Container: Reel | 0Reel |
|
$0.2300 / $0.2400 | Buy Now |
|
Onlinecomponents.com | P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ RoHS: Compliant | 0 |
|
$0.1931 / $0.2162 | Buy Now |
DISTI #
85981705
|
Verical | Trans MOSFET P-CH 20V 5.5A 6-Pin TSOT-23 T/R RoHS: Compliant Min Qty: 1334 Package Multiple: 1 Date Code: 2301 | Americas - 44449 |
|
$0.2100 / $0.2811 | Buy Now |
DISTI #
82781192
|
Verical | Trans MOSFET P-CH 20V 5.5A 6-Pin TSOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2422 | Americas - 3000 |
|
$0.2084 / $0.2242 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
FDC602P
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDC602P
onsemi
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, TSOT-23-6, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TSOT-23-6 | |
Package Description | SUPERSOT-6 | |
Manufacturer Package Code | 419BL | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 0.033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.6 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDC602P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC602P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
SI3445DV_NL | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC602P vs SI3445DV_NL |
SI3469DV-T1-E3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6 | FDC602P vs SI3469DV-T1-E3 |
FDC604P | Rochester Electronics LLC | Check for Price | 5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | FDC602P vs FDC604P |
FDC602P_NL | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | FDC602P vs FDC602P_NL |
SI3445DV | Rochester Electronics LLC | Check for Price | 5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | FDC602P vs SI3445DV |
SI3469DV-T1-GE3 | Vishay Siliconix | Check for Price | P-CH MOSFET TSOP-6 20V 30MOHM @ 10V - Tape and Reel | FDC602P vs SI3469DV-T1-GE3 |
FDC604PD87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC602P vs FDC604PD87Z |
The FDC602P can operate from -40°C to 125°C, making it suitable for a wide range of applications.
The FDC602P requires a bias voltage of 5V ± 10% and a bias current of 1mA to 10mA for optimal performance. Ensure the bias voltage is stable and within the recommended range.
Use a multi-layer PCB with a solid ground plane and a thermal pad connected to a heat sink or a thermal via to ensure efficient heat dissipation. Keep the PCB layout compact and symmetrical to minimize parasitic inductance.
Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to protect the FDC602P from electrostatic discharge. Ensure the ESD protection devices are rated for the maximum voltage and current of the application.
The FDC602P can be driven with a signal source impedance of 50Ω to 100Ω. Use a drive strength of 1mA to 10mA to ensure reliable switching and minimize power consumption.