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Part Details for FDB8896 by onsemi
Results Overview of FDB8896 by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDB8896 Information
FDB8896 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDB8896
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85982931
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Verical | Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R Min Qty: 281 Package Multiple: 1 Date Code: 2101 | Americas - 913 |
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$1.3375 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 80A, 30V, 0.0068ohm, N-Channel, MOSFET, TO-263AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 913 |
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$0.6615 / $1.0700 | Buy Now |
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DISTI #
FDB8896
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TME | Transistor: N-MOSFET, unipolar, 30V, 80A, 80W, D2PAK Min Qty: 1 | 0 |
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$0.6400 / $0.9400 | RFQ |
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DISTI #
SMC-FDB8896
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 15005 |
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RFQ | |
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DISTI #
FDB8896
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EBV Elektronik | Trans MOSFET NCH 30V 19A 3Pin2Tab D2PAK TR (Alt: FDB8896) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FDB8896
FDB8896 CAD Models
FDB8896 Part Data Attributes
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FDB8896
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB8896
onsemi
N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ, D2PAK-3 / TO-263-2, 800-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK-3 / TO-263-2 | |
| Package Description | TO-263AB, 3 PIN | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 74 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0068 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 80 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDB8896
This table gives cross-reference parts and alternative options found for FDB8896. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB8896, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDB8896 | Rochester Electronics LLC | Check for Price | 80A, 30V, 0.0068ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | FDB8896 vs FDB8896 |
| FDB8896 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN | FDB8896 vs FDB8896 |
| ISL9N306AS3ST | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | FDB8896 vs ISL9N306AS3ST |
FDB8896 Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
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Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decoupling capacitors to minimize noise and ripple.
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The maximum allowed current through the output pins is 1.5A per pin. Exceeding this limit may cause damage to the device.
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Use a voltage supervisor or a voltage monitor to detect overvoltage and undervoltage conditions. Implement a power-on reset (POR) circuit to ensure the device is properly reset during power-up.
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Use a TVS (Transient Voltage Suppressor) diode or a zener diode with a voltage rating higher than the maximum input voltage to protect the device from ESD events.