Part Details for FDB8444 by Fairchild Semiconductor Corporation
Results Overview of FDB8444 by Fairchild Semiconductor Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
FDB8444 Information
FDB8444 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDB8444
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FDB8444-ND
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DigiKey | POWER FIELD-EFFECT TRANSISTOR, 7 Min Qty: 217 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
165541 In Stock |
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$1.3800 | Buy Now |
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Bristol Electronics | Min Qty: 3 | 800 |
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$0.9763 / $2.3811 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 40V, 9.9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 1426 |
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$0.7687 / $1.8303 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 40V, 9.9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 640 |
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$1.2080 / $2.9284 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 40V, 9.9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 640 |
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$1.3819 / $3.1890 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 70A, 40V, 9.9ohm, N-Channel, MOSFET, TO-263AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 166048 |
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$0.8269 / $1.3300 | Buy Now |
Part Details for FDB8444
FDB8444 CAD Models
FDB8444 Part Data Attributes
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FDB8444
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDB8444
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 70A I(D), 40V, 9.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 2 | |
| Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 307 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 9.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDB8444
This table gives cross-reference parts and alternative options found for FDB8444. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB8444, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDB8444 | onsemi | Check for Price | N-Channel PowerTrench® MOSFET, 40V, 70A, 5.5mΩ, D2PAK-3 / TO-263-2, 800-REEL | FDB8444 vs FDB8444 |
FDB8444 Frequently Asked Questions (FAQ)
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The FDB8444 can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance and reliability.
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To ensure proper biasing, make sure to follow the recommended voltage and current ratings in the datasheet. Typically, a voltage supply of 5V to 15V is recommended, and the current limit should be set to 1A to 2A depending on the application.
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The maximum power dissipation for the FDB8444 is 1.5W. However, it's recommended to keep the power dissipation below 1W to ensure reliable operation and prevent overheating.
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Yes, the FDB8444 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize electromagnetic interference (EMI).
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To protect the FDB8444 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, ensure that the device is properly grounded during assembly and testing.