Part Details for FDB2552 by Fairchild Semiconductor Corporation
Results Overview of FDB2552 by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDB2552 Information
FDB2552 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDB2552
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
ComSIT USA | 150 V, 37 A, 36 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Compliant |
|
|
RFQ | |
|
DISTI #
FDB2552
|
IBS Electronics | FDB2552 by Fairchild is an N-Channel 150V 36mOhm PowerTrench MOSFET in a TO-263AB package, ideal for high-efficiency power management and switching applications. Min Qty: 800 Package Multiple: 1 | 0 |
|
$1.4170 / $1.4560 | Buy Now |
|
|
Win Source Electronics | MOSFET N-CH 150V 37A TO-263AB | 25182 |
|
$0.8709 / $1.3063 | Buy Now |
Part Details for FDB2552
FDB2552 CAD Models
FDB2552 Part Data Attributes
|
|
FDB2552
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FDB2552
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | TO-263AB, 3 PIN | |
| Pin Count | 2 | |
| Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 390 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDB2552
This table gives cross-reference parts and alternative options found for FDB2552. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB2552, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDB2552 | Rochester Electronics LLC | Check for Price | 5A, 150V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | FDB2552 vs FDB2552 |
| FDB2552_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN | FDB2552 vs FDB2552_NL |
FDB2552 Frequently Asked Questions (FAQ)
-
The FDB2552 can operate safely between -40°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
-
To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. The recommended biasing voltage is Vgs = 10V, Vds = 15V, and Id = 250mA.
-
The maximum current rating for the FDB2552 is 250mA, but it's recommended to operate at a maximum of 200mA to ensure reliability and prevent overheating.
-
To protect the FDB2552 from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container. Avoid touching the device's pins or leads.
-
Yes, the FDB2552 can be used in high-frequency applications up to 100 kHz, but it's essential to consider the device's parasitic capacitance and inductance when designing the circuit.