Datasheets
FDB088N08 by:
Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 85A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3

Part Details for FDB088N08 by Fairchild Semiconductor Corporation

Results Overview of FDB088N08 by Fairchild Semiconductor Corporation

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FDB088N08 Information

FDB088N08 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDB088N08

Part # Distributor Description Stock Price Buy
Win Source Electronics MOSFET N-CH 75V 75A D2PAK 25290
  • 30 $2.1647
  • 70 $1.7763
  • 105 $1.7207
  • 140 $1.6652
  • 180 $1.6098
  • 245 $1.4432
$1.4432 / $2.1647 Buy Now

Part Details for FDB088N08

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FDB088N08 Part Data Attributes

FDB088N08 Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDB088N08 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 85A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description ROHS COMPLIANT, D2PAK-3
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 309 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 85 A
Drain-source On Resistance-Max 0.0088 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 340 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDB088N08 Related Parts

FDB088N08 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FDB088N08 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.

  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings in the datasheet. Typically, a Vgs of 10-15V and a Vds of 30-40V are used, with a maximum Id of 8A. Also, ensure the gate drive voltage is sufficient to fully enhance the device.

  • For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance. Use thermal vias and a heat sink with a thermal interface material (TIM) to dissipate heat efficiently.

  • Use a voltage regulator or a voltage clamp to limit the voltage across the device. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Also, consider using a fuse or a PTC (Positive Temperature Coefficient) thermistor to protect against excessive current.

  • Handle the device with ESD-safe materials and tools. Ground yourself before handling the device, and use an ESD wrist strap or mat. Avoid touching the device's pins or exposed die. Store the device in an ESD-safe package, and follow proper soldering and assembly procedures to prevent ESD damage.

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