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Power MOSFET, N-Channel, UniFETTM, 200V, 70A, 35mΩ, TO-3P, TO-3P-3L, 450-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDA70N20 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86K1322
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Newark | Mosfet (Metal-Oxide-Semiconductor Field-Effect Transistor) |Onsemi FDA70N20 RoHS: Not Compliant Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
FDA70N20
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TME | Transistor: N-MOSFET, unipolar, 200V, 45A, Idm: 280A, 417W, TO3PN Min Qty: 1 | 0 |
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$2.0600 / $2.8800 | RFQ |
DISTI #
FDA70N20
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Avnet Silica | Trans MOSFET NCH 200V 70A 3Pin3Tab TO3PN Rail (Alt: FDA70N20) RoHS: Compliant Min Qty: 900 Package Multiple: 30 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Cytech Systems Limited | MOSFET N-CH 200V 70A TO3PN | 675 |
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RFQ | |
DISTI #
FDA70N20
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EBV Elektronik | Trans MOSFET NCH 200V 70A 3Pin3Tab TO3PN Rail (Alt: FDA70N20) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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FDA70N20
onsemi
Buy Now
Datasheet
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FDA70N20
onsemi
Power MOSFET, N-Channel, UniFETTM, 200V, 70A, 35mΩ, TO-3P, TO-3P-3L, 450-TUBE
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-3P-3L | |
Package Description | TO-3PN, 3 PIN | |
Manufacturer Package Code | 340BZ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | FAST SWITCHING | |
Avalanche Energy Rating (Eas) | 1742 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 70 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 417 W | |
Pulsed Drain Current-Max (IDM) | 280 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDA70N20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA70N20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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STW75N20 | STMicroelectronics | Check for Price | 75A, 200V, 0.034ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | FDA70N20 vs STW75N20 |
FMW73N20GSC-K1 | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 73A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | FDA70N20 vs FMW73N20GSC-K1 |
The maximum SOA for the FDA70N20 is typically defined by the device's voltage and current ratings. For the FDA70N20, the maximum voltage rating is 700V and the maximum current rating is 20A. However, the actual SOA may be limited by the device's thermal characteristics and the application's specific requirements.
Proper thermal management is crucial for the FDA70N20. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) if necessary. The heat sink should be designed to dissipate the maximum expected power loss, and the device's thermal resistance (RθJA) should be considered in the design.
The recommended gate drive voltage for the FDA70N20 is typically between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching performance. A higher gate drive voltage can result in faster switching times, but may also increase power consumption.
To protect the FDA70N20 from overvoltage and overcurrent conditions, consider using a voltage clamp or a surge protector to limit the voltage across the device. Additionally, a current sense resistor and a fuse or a current limiter can be used to detect and respond to overcurrent conditions.
For optimal performance and reliability, the PCB layout should minimize parasitic inductance and capacitance. Use a solid ground plane, keep the gate drive traces short and wide, and ensure good thermal conductivity between the device and the heat sink. Additionally, consider using a Kelvin connection for the gate drive to reduce noise and improve switching performance.