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Part Details for FDA59N30 by onsemi
Results Overview of FDA59N30 by onsemi
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
FDA59N30 Information
FDA59N30 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDA59N30
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
04M9076
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Newark | Mosfet, N Channel, 300V, 59A, To-3Pn-3, Channel Type:N Channel, Drain Source Voltage Vds:300V, Continuous Drain Current Id:59A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Onsemi FDA59N30 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 762 |
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$3.2500 / $5.3800 | Buy Now |
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DISTI #
29AC6240
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Newark | Uf 300V 56Mohm To3Pn Rohs Compliant: Yes |Onsemi FDA59N30 RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.9000 | Buy Now |
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DISTI #
FDA59N30-ND
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DigiKey | MOSFET N-CH 300V 59A TO3PN Min Qty: 1 Lead time: 10 Weeks Container: Tube |
312 In Stock |
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$1.9423 / $5.0700 | Buy Now |
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DISTI #
FDA59N30
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Avnet Americas | Power MOSFET, N Channel, 300 V, 59 A, 0.047 ohm, TO-3P, Through Hole - Rail/Tube (Alt: FDA59N30) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 462 |
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$1.8280 / $1.8949 | Buy Now |
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DISTI #
512-FDA59N30
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Mouser Electronics | MOSFETs 300V NCH MOSFET RoHS: Compliant | 1373 |
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$1.9400 / $5.0600 | Buy Now |
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DISTI #
E02:0323_00840113
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Arrow Electronics | Trans MOSFET N-CH 300V 59A 3-Pin(3+Tab) TO-3P Tube Min Qty: 450 Package Multiple: 30 Lead time: 10 Weeks | Europe - 450 |
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$4.4105 / $4.6524 | Buy Now |
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Onlinecomponents.com | N-Channel Power MOSFET, UniFETTM, 300V, 59A, 56mΩ, TO-3P RoHS: Compliant |
900 In Stock |
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$1.8400 / $1.8900 | Buy Now |
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DISTI #
87684458
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Verical | Trans MOSFET N-CH 300V 59A 3-Pin(3+Tab) TO-3P Tube Min Qty: 30 Package Multiple: 30 Date Code: 2502 | Americas - 900 |
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$2.3920 / $2.4570 | Buy Now |
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DISTI #
14289137
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Verical | Trans MOSFET N-CH 300V 59A 3-Pin(3+Tab) TO-3P Tube Min Qty: 450 Package Multiple: 450 | Americas - 450 |
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$4.4230 / $4.6656 | Buy Now |
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DISTI #
FDA59N30
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TME | Transistor: N-MOSFET, unipolar, 300V, 35A, Idm: 236A, 500W, TO3PN Min Qty: 1 | 22 |
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$2.2900 / $3.8300 | Buy Now |
Part Details for FDA59N30
FDA59N30 CAD Models
FDA59N30 Part Data Attributes
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FDA59N30
onsemi
Buy Now
Datasheet
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Compare Parts:
FDA59N30
onsemi
Power MOSFET, N-Channel, UniFETTM, 300V, 59A, 56mΩ, TO-3P, TO-3P-3L, 450-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-3P-3L | |
| Package Description | TO-3PN, 3 PIN | |
| Manufacturer Package Code | 340BZ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 1734 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 59 A | |
| Drain-source On Resistance-Max | 0.056 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 500 W | |
| Pulsed Drain Current-Max (IDM) | 236 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDA59N30 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the FDA59N30 is -55°C to 150°C.
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To ensure proper biasing, the FDA59N30 requires a Vcc of 5V ± 10% and a Vee of -5V ± 10%. Additionally, the input voltage should be within the recommended operating range of 0.5V to 4.5V.
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For optimal thermal management, it is recommended to use a multi-layer PCB with a solid ground plane and to place the FDA59N30 near a heat sink or thermal pad. Additionally, ensure that the PCB layout minimizes thermal resistance and provides adequate clearance around the device.
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To prevent ESD damage, it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays on the input and output pins of the FDA59N30. Additionally, ensure that the PCB design includes ESD protection features such as guard rings and ESD protection zones.
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For optimal assembly and soldering, it is recommended to follow the onsemi recommended soldering profile and to use a soldering iron with a temperature range of 220°C to 240°C. Additionally, ensure that the PCB is cleaned and dried before assembly to prevent moisture damage.