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Part Details for FDA28N50 by onsemi
Results Overview of FDA28N50 by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDA28N50 Information
FDA28N50 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDA28N50
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54AH8611
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Newark | Mosfet, N-Ch, 500V, 28A, 150Deg C, 310W Rohs Compliant: Yes |Onsemi FDA28N50 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 638 |
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$3.5700 / $6.4800 | Buy Now |
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DISTI #
FDA28N50-ND
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DigiKey | MOSFET N-CH 500V 28A TO3PN Min Qty: 1 Lead time: 60 Weeks Container: Tube |
25 In Stock |
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$2.2129 / $5.3000 | Buy Now |
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DISTI #
FDA28N50
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Avnet Americas | - Rail/Tube (Alt: FDA28N50) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 60 Weeks, 0 Days Container: Tube | 0 |
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$2.0827 / $2.1589 | Buy Now |
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DISTI #
512-FDA28N50
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Mouser Electronics | MOSFETs UniFET 500V RoHS: Compliant | 3417 |
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$2.2100 / $4.8800 | Buy Now |
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Onlinecomponents.com | N-Channel Power MOSFET, UniFETTM, 500 V, 28 A, 155 mΩ, TO-3P RoHS: Compliant | 0 |
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$2.0900 / $2.4900 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 28A I(D), 500V, 0.155OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 9 |
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$2.4638 / $4.9275 | Buy Now |
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DISTI #
FDA28N50
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TME | Transistor: N-MOSFET, unipolar, 500V, 17A, Idm: 112A, 310W, TO3PN Min Qty: 1 | 0 |
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$2.6500 / $4.5200 | RFQ |
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DISTI #
FDA28N50
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 450 | 0 |
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$2.2100 | Buy Now |
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DISTI #
FDA28N50
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Avnet Asia | Trans MOSFET N-CH 500V 28A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FDA28N50) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 60 Weeks, 0 Days | 0 |
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$2.0827 / $2.3293 | Buy Now |
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DISTI #
FDA28N50
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Avnet Silica | (Alt: FDA28N50) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 37 Weeks, 0 Days | Silica - 390 |
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Buy Now |
Part Details for FDA28N50
FDA28N50 CAD Models
FDA28N50 Part Data Attributes
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FDA28N50
onsemi
Buy Now
Datasheet
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Compare Parts:
FDA28N50
onsemi
Power MOSFET, N-Channel, UniFETTM, 500 V, 28 A, 155 mΩ, TO-3P, TO-3P-3L, 450-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-3P-3L | |
| Package Description | TO-3PN, 3 PIN | |
| Manufacturer Package Code | 340BZ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 60 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 2391 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.155 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 310 W | |
| Pulsed Drain Current-Max (IDM) | 112 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDA28N50 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the FDA28N50 is -55°C to 150°C.
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To ensure proper biasing, the FDA28N50 requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 10V and 500V. Additionally, a gate resistor (Rg) between 1kΩ and 10kΩ is recommended to prevent oscillations.
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The maximum continuous drain current (Id) for the FDA28N50 is 28A, and the maximum pulsed drain current (Idm) is 56A.
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To protect the FDA28N50 from overvoltage and overcurrent, it is recommended to use a voltage clamp or a zener diode to limit the voltage, and a current sense resistor or a fuse to detect and interrupt excessive current.
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For optimal thermal performance, it is recommended to use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Additionally, a heat sink or a thermal interface material (TIM) can be used to improve heat dissipation.