Part Details for FD1000R17IE4DB2BOSA1 by Infineon Technologies AG
Results Overview of FD1000R17IE4DB2BOSA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Healthcare
Medical Imaging
FD1000R17IE4DB2BOSA1 Information
FD1000R17IE4DB2BOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FD1000R17IE4DB2BOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86108487
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Verical | Prime Pack 3 Module Min Qty: 1 Package Multiple: 1 Date Code: 1301 | Americas - 10 |
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$572.6250 / $650.7125 | Buy Now |
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DISTI #
86109659
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Verical | Prime Pack 3 Module Min Qty: 1 Package Multiple: 1 Date Code: 1601 | Americas - 6 |
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$572.6250 / $650.7125 | Buy Now |
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Rochester Electronics | FD1000R17 - IGBT Module RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 16 |
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$458.1000 / $520.5700 | Buy Now |
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DISTI #
SP000823690
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EBV Elektronik | IGBTs (Alt: SP000823690) RoHS: Compliant Min Qty: 2 Package Multiple: 2 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FD1000R17IE4DB2BOSA1
FD1000R17IE4DB2BOSA1 CAD Models
FD1000R17IE4DB2BOSA1 Part Data Attributes
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FD1000R17IE4DB2BOSA1
Infineon Technologies AG
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Datasheet
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FD1000R17IE4DB2BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 1390 A | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 6250 W | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1910 ns | |
| Turn-on Time-Nom (ton) | 830 ns | |
| VCEsat-Max | 2.45 V |