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Part Details for FCPF165N65S3L1 by onsemi
Results Overview of FCPF165N65S3L1 by onsemi
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
FCPF165N65S3L1 Information
FCPF165N65S3L1 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FCPF165N65S3L1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85987328
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Verical | N-Channel SuperFET MOSFET Min Qty: 202 Package Multiple: 1 Date Code: 2201 | Americas - 29120 |
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$1.8625 | Buy Now |
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DISTI #
85986779
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Verical | N-Channel SuperFET MOSFET Min Qty: 202 Package Multiple: 1 Date Code: 2101 | Americas - 940 |
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$1.8625 | Buy Now |
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Bristol Electronics | 680 |
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RFQ | ||
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Quest Components | 544 |
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$1.4388 / $3.4880 | Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor RoHS: Compliant Status: Obsolete Min Qty: 1 | 30060 |
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$0.9222 / $1.4900 | Buy Now |
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DISTI #
FCPF165N65S3L1
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Avnet Silica | Transistor MOSFET NCH 650V 19A 3Pin TO220F TR (Alt: FCPF165N65S3L1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FCPF165N65S3L1
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EBV Elektronik | Transistor MOSFET NCH 650V 19A 3Pin TO220F TR (Alt: FCPF165N65S3L1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 22 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 650V 19A TO220F-3 / N-Channel 650 V 19A (Tc) 35W (Tc) Through Hole TO-220F-3 | 2800 |
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$1.0790 / $1.6185 | Buy Now |
Part Details for FCPF165N65S3L1
FCPF165N65S3L1 CAD Models
FCPF165N65S3L1 Part Data Attributes
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FCPF165N65S3L1
onsemi
Buy Now
Datasheet
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Compare Parts:
FCPF165N65S3L1
onsemi
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 FullPak | |
| Package Description | TO-220F, 3 PIN | |
| Manufacturer Package Code | 340BF | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Date Of Intro | 2017-03-03 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 87 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.165 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 47.5 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FCPF165N65S3L1
This table gives cross-reference parts and alternative options found for FCPF165N65S3L1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCPF165N65S3L1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FCPF165N65S3R0L | onsemi | Check for Price | Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE | FCPF165N65S3L1 vs FCPF165N65S3R0L |
FCPF165N65S3L1 Frequently Asked Questions (FAQ)
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The maximum junction temperature for the FCPF165N65S3L1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. This includes setting the gate-source voltage (Vgs) within the recommended range, typically between 2V to 5V, and ensuring the drain-source voltage (Vds) is within the specified maximum rating.
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For optimal thermal performance, it's recommended to use a multi-layer PCB with a solid ground plane and thermal vias to dissipate heat. Additionally, consider using a heat sink or thermal interface material to further improve heat dissipation. Consult the datasheet and application notes for more detailed guidance.
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Yes, the FCPF165N65S3L1 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, ensure that the device is properly biased and the PCB layout is optimized for high-frequency operation to minimize parasitic inductance and capacitance.
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To protect the FCPF165N65S3L1 from ESD and overvoltage, follow proper handling and storage procedures, and consider using ESD protection devices and overvoltage protection circuits in your design. Additionally, ensure that the device is properly biased and the PCB layout is designed to minimize the risk of ESD and overvoltage events.