-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for FCPF125N65S3 by onsemi
Results Overview of FCPF125N65S3 by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
FCPF125N65S3 Information
FCPF125N65S3 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FCPF125N65S3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
22AC8206
|
Newark | Mosfet, N-Ch, 650V, 24A, To-220F, Transistor Polarity:N Channel, Continuous Drain Current Id:24A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.105Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4.5V, Power Rohs Compliant: Yes |Onsemi FCPF125N65S3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$3.5300 / $6.0700 | Buy Now |
|
DISTI #
FCPF125N65S3-ND
|
DigiKey | MOSFET N-CH 650V 24A TO220F Min Qty: 1 Lead time: 12 Weeks Container: Tube |
482 In Stock |
|
$2.2459 / $4.8900 | Buy Now |
|
DISTI #
FCPF125N65S3
|
Avnet Americas | Transistor MOSFET N-CH 650V 24A 3-Pin TO-220F T/R - Rail/Tube (Alt: FCPF125N65S3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 4000 Factory Stock |
|
$2.1408 / $2.1911 | Buy Now |
|
DISTI #
512-FCPF125N65S3
|
Mouser Electronics | MOSFETs SuperFET3 650V 125 mOhm, TO220F PKG RoHS: Compliant | 1757 |
|
$2.2400 / $4.7900 | Buy Now |
|
|
Onlinecomponents.com | N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220F RoHS: Compliant | 0 |
|
$2.2300 / $4.6700 | Buy Now |
|
DISTI #
88111350
|
Verical | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1000 Package Multiple: 1000 | Americas - 4000 |
|
$2.2600 | Buy Now |
|
DISTI #
FCPF125N65S3
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1000 | 0 |
|
$2.2500 | Buy Now |
|
DISTI #
FCPF125N65S3
|
Avnet Silica | Transistor MOSFET NCH 650V 24A 3Pin TO220F TR (Alt: FCPF125N65S3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days | Silica - 750 |
|
Buy Now | |
|
|
Cytech Systems Limited | MOSFET N-CH 650V 24A TO220F | 5000 |
|
RFQ | |
|
DISTI #
FCPF125N65S3
|
EBV Elektronik | Transistor MOSFET NCH 650V 24A 3Pin TO220F TR (Alt: FCPF125N65S3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for FCPF125N65S3
FCPF125N65S3 CAD Models
FCPF125N65S3 Part Data Attributes
|
|
FCPF125N65S3
onsemi
Buy Now
Datasheet
|
Compare Parts:
FCPF125N65S3
onsemi
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 FullPak | |
| Package Description | TO-220F, 3 PIN | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Date Of Intro | 2017-05-12 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 115 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 38 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FCPF125N65S3
This table gives cross-reference parts and alternative options found for FCPF125N65S3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCPF125N65S3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTPF125N65S3H | onsemi | $3.8329 | Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 24 A, 125 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE | FCPF125N65S3 vs NTPF125N65S3H |
FCPF125N65S3 Frequently Asked Questions (FAQ)
-
The maximum junction temperature for the FCPF125N65S3 is 150°C. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.
-
To ensure proper biasing, make sure to provide a stable voltage supply to the gate driver, and ensure the gate-source voltage (Vgs) is within the recommended range of 2.5V to 10V. Additionally, ensure the drain-source voltage (Vds) is within the recommended range of 0V to 650V.
-
For optimal thermal management, it's recommended to use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Additionally, ensure good airflow around the device and consider using a heat sink if the device will be operating at high temperatures or high power levels.
-
To protect the FCPF125N65S3 from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure the PCB is designed with ESD protection in mind, and consider adding ESD protection devices such as TVS diodes or ESD arrays.
-
The recommended gate resistor value for the FCPF125N65S3 is typically in the range of 10Ω to 100Ω. However, the optimal value depends on the specific application and switching frequency. It's recommended to consult the application note or contact onsemi support for more information.