-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 30 A, 99 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FCPF099N65S3 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
54AH6229
|
Newark | Mosfet, N-Ch, 650V, 30A, 150Deg C, 43W Rohs Compliant: Yes |Onsemi FCPF099N65S3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2827 |
|
$4.1900 / $6.6900 | Buy Now |
DISTI #
FCPF099N65S3-ND
|
DigiKey | MOSFET N-CH 650V 30A TO220F Min Qty: 1 Lead time: 18 Weeks Container: Tube |
3194 In Stock |
|
$2.5928 / $5.5100 | Buy Now |
DISTI #
FCPF099N65S3
|
Avnet Americas | Transistor MOSFET N-CH 650V 30A 3-Pin TO-220FP T/R - Rail/Tube (Alt: FCPF099N65S3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Tube | 121000 Factory Stock |
|
$2.4672 / $2.5295 | Buy Now |
DISTI #
512-FCPF099N65S3
|
Mouser Electronics | MOSFETs SuperFET3 650V 99 mOhm | 11726 |
|
$2.5900 / $5.1900 | Buy Now |
DISTI #
E02:0323_11480005
|
Arrow Electronics | Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1000 Package Multiple: 50 Lead time: 18 Weeks Date Code: 2452 | Europe - 1000 |
|
$4.9342 / $5.1874 | Buy Now |
|
Onlinecomponents.com | N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 30 A, 99 mΩ, TO-220F RoHS: Compliant | 0 |
|
$2.5700 / $5.3900 | Buy Now |
DISTI #
87996164
|
Verical | Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1000 Package Multiple: 1000 | Americas - 231000 |
|
$2.6091 | Buy Now |
DISTI #
88052382
|
Verical | Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1000 Package Multiple: 1000 Date Code: 2452 | Americas - 1000 |
|
$4.9426 / $5.1962 | Buy Now |
DISTI #
FCPF099N65S3
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1000 | 0 |
|
$2.5900 | Buy Now |
DISTI #
FCPF099N65S3
|
Avnet Asia | Transistor MOSFET N-CH 650V 30A 3-Pin TO-220FP T/R (Alt: FCPF099N65S3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days | 0 |
|
$2.4402 / $2.7292 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
FCPF099N65S3
onsemi
Buy Now
Datasheet
|
Compare Parts:
FCPF099N65S3
onsemi
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 30 A, 99 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-220-3 FullPak | |
Package Description | TO-220F, 3 PIN | |
Manufacturer Package Code | 221AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Date Of Intro | 2017-04-24 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 145 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.099 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 43 W | |
Pulsed Drain Current-Max (IDM) | 75 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum junction temperature that the FCPF099N65S3 can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a cold plate. Use a thermal interface material (TIM) to fill any gaps between the device and the heat sink, and ensure the heat sink is properly mounted and secured.
The recommended gate drive voltage for the FCPF099N65S3 is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
Yes, the FCPF099N65S3 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure the device is properly driven to minimize switching losses.
To protect the FCPF099N65S3 from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in the circuit. Additionally, consider using overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.