Part Details for FCP150N65F by onsemi
Results Overview of FCP150N65F by onsemi
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
FCP150N65F Information
FCP150N65F by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FCP150N65F
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
40Y7284
|
Newark | Sf2 650V 150Mohm F To220/Tube Rohs Compliant: Yes |Onsemi FCP150N65F RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$2.5400 / $3.3400 | Buy Now |
|
DISTI #
FCP150N65FOS-ND
|
DigiKey | MOSFET N-CH 650V 24A TO220-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
796 In Stock |
|
$2.4316 / $5.9900 | Buy Now |
|
DISTI #
FCP150N65F
|
Avnet Americas | Trans MOSFET N-CH 650V 24A 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP150N65F) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$2.3136 / $2.3723 | Buy Now |
|
DISTI #
512-FCP150N65F
|
Mouser Electronics | MOSFETs N-Channel SuperFET<sup> </sup> II FRFET<sup> </sup> MOSFET RoHS: Compliant | 1374 |
|
$2.4300 / $5.9900 | Buy Now |
|
|
Onlinecomponents.com | N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650V, 24A, 150mΩ, TO-220 RoHS: Compliant | 0 |
|
$2.4100 / $5.0600 | Buy Now |
|
DISTI #
FCP150N65F
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 | 0 |
|
$2.4300 | Buy Now |
|
DISTI #
FCP150N65F
|
Avnet Silica | Trans MOSFET NCH 650V 24A 3Pin TO220 Tube (Alt: FCP150N65F) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
DISTI #
FCP150N65F
|
EBV Elektronik | Trans MOSFET NCH 650V 24A 3Pin TO220 Tube (Alt: FCP150N65F) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 18 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for FCP150N65F
FCP150N65F CAD Models
FCP150N65F Part Data Attributes
|
|
FCP150N65F
onsemi
Buy Now
Datasheet
|
Compare Parts:
FCP150N65F
onsemi
Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650V, 24A, 150mΩ, TO-220, TO-220-3, 800-TUBE
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 24 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 298 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
FCP150N65F Frequently Asked Questions (FAQ)
-
The maximum junction temperature of the FCP150N65F is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
-
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be mounted to the device using a thermal interface material with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to prevent hot spots.
-
The recommended gate drive voltage for the FCP150N65F is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI emissions.
-
To protect the FCP150N65F from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
-
To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces for the power connections. Keep the gate drive signal traces away from the power traces to prevent noise coupling. Use a solid ground plane and a decoupling capacitor close to the device to reduce noise and ringing.