-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for FCP099N65S3 by onsemi
Results Overview of FCP099N65S3 by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
FCP099N65S3 Information
FCP099N65S3 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FCP099N65S3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
27AC5648
|
Newark | Mosfet, N-Ch, 650V, 30A, To-220-3, Transistor Polarity:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.079Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4.5V, Power Rohs Compliant: Yes |Onsemi FCP099N65S3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1355 |
|
$4.2500 / $5.5000 | Buy Now |
|
DISTI #
FCP099N65S3-ND
|
DigiKey | MOSFET N-CH 650V 30A TO220-3 Min Qty: 1 Lead time: 18 Weeks Container: Tube |
780 In Stock |
|
$2.6274 / $4.0600 | Buy Now |
|
DISTI #
FCP099N65S3
|
Avnet Americas | Trans MOSFET N-CH 650V 30A 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP099N65S3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 0 Days Container: Tube | 0 |
|
$2.5056 / $2.5633 | Buy Now |
|
DISTI #
512-FCP099N65S3
|
Mouser Electronics | MOSFETs SuperFET3 650V 99 mOhm,TO220 PKG RoHS: Compliant | 762 |
|
$2.6200 / $3.9800 | Buy Now |
|
|
Onlinecomponents.com | N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 30 A, 99 mΩ, TO-220 RoHS: Compliant | 0 |
|
$2.6100 / $5.4600 | Buy Now |
|
DISTI #
FCP099N65S3
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 | 0 |
|
$2.6300 | Buy Now |
|
DISTI #
FCP099N65S3
|
Avnet Silica | Trans MOSFET NCH 650V 30A 3Pin TO220 Tube (Alt: FCP099N65S3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 19 Weeks, 0 Days | Silica - 200 |
|
Buy Now | |
|
DISTI #
FCP099N65S3
|
EBV Elektronik | Trans MOSFET NCH 650V 30A 3Pin TO220 Tube (Alt: FCP099N65S3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 20 Weeks, 0 Days | EBV - 300 |
|
Buy Now | |
|
|
LCSC | 650V 30A 227W 4.5V 1 N-channel TO-220 MOSFETs ROHS | 8 |
|
$5.1386 / $6.8676 | Buy Now |
|
|
Win Source Electronics | MOSFET N-CH 650V 30A TO220-3 | 5650 |
|
$3.0323 / $4.5483 | Buy Now |
Part Details for FCP099N65S3
FCP099N65S3 CAD Models
FCP099N65S3 Part Data Attributes
|
|
FCP099N65S3
onsemi
Buy Now
Datasheet
|
Compare Parts:
FCP099N65S3
onsemi
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 30 A, 99 mΩ, TO-220, TO-220-3, 800-TUBE
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Date Of Intro | 2017-06-20 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 145 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.099 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 227 W | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FCP099N65S3
This table gives cross-reference parts and alternative options found for FCP099N65S3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCP099N65S3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB65R110CFDAATMA1 | Infineon Technologies AG | $3.3339 | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 | FCP099N65S3 vs IPB65R110CFDAATMA1 |
| SIHB33N60EF-GE3 | Vishay Intertechnologies | $4.2602 | Power Field-Effect Transistor, 33A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 | FCP099N65S3 vs SIHB33N60EF-GE3 |
| SIHG28N60EF-GE3 | Vishay Intertechnologies | $4.2751 | Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | FCP099N65S3 vs SIHG28N60EF-GE3 |
| STB36NM60N | STMicroelectronics | Check for Price | Automotive-grade N-channel 600 V, 0.093 Ohm typ., 29 A MDmesh II Power MOSFET in a D2PAK package | FCP099N65S3 vs STB36NM60N |
| IPB60R099CPXT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | FCP099N65S3 vs IPB60R099CPXT |
| IPI60R099CPA | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | FCP099N65S3 vs IPI60R099CPA |
| TK31N60W5 | Toshiba America Electronic Components | Check for Price | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | FCP099N65S3 vs TK31N60W5 |
| IPB60R099CPA | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | FCP099N65S3 vs IPB60R099CPA |
| SIHB33N60E-E3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | FCP099N65S3 vs SIHB33N60E-E3 |
| SIHW33N60E-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | FCP099N65S3 vs SIHW33N60E-GE3 |
FCP099N65S3 Frequently Asked Questions (FAQ)
-
The maximum junction temperature of the FCP099N65S3 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
-
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be attached to the top of the package using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
-
The recommended gate drive voltage for the FCP099N65S3 is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI emissions.
-
To protect the FCP099N65S3 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
-
To minimize parasitic inductance and ensure reliable operation, use a 2-layer or 4-layer PCB with a solid ground plane and a separate power plane. Keep the high-frequency loops small and use a Kelvin connection for the gate drive signal. Avoid using vias under the device and keep the PCB traces as short and wide as possible.