Part Details for FCH47N60F_F133 by onsemi
Results Overview of FCH47N60F_F133 by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
FCH47N60F_F133 Information
FCH47N60F_F133 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| MSP430F133IPMR | Texas Instruments | 16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, 12 bit ADC, USART 64-LQFP -40 to 85 | |
| MSP430F133IPAG | Texas Instruments | 16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, 12 bit ADC, USART 64-TQFP -40 to 85 | |
| MSP430F133IPM | Texas Instruments | 16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, 12 bit ADC, USART 64-LQFP -40 to 85 |
Part Details for FCH47N60F_F133
FCH47N60F_F133 CAD Models
FCH47N60F_F133 Part Data Attributes
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FCH47N60F_F133
onsemi
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Datasheet
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FCH47N60F_F133
onsemi
N-Channel SuperFET® FRFET® MOSFET 600V, 47A, 73mΩ, TO-247 3L, 3600-RAIL
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | ROHS COMPLIANT, TO-247AB, 3 PIN | |
| Manufacturer Package Code | TO247A03 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1800 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 47 A | |
| Drain-source On Resistance-Max | 0.073 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 417 W | |
| Pulsed Drain Current-Max (IDM) | 141 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FCH47N60F_F133
This table gives cross-reference parts and alternative options found for FCH47N60F_F133. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCH47N60F_F133, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SPW47N60CFDFKSA1 | Infineon Technologies AG | $8.1743 | Power Field-Effect Transistor, 46A I(D), 600V, 0.083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN | FCH47N60F_F133 vs SPW47N60CFDFKSA1 |
| FCH47N60F | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 47A I(D), 600V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | FCH47N60F_F133 vs FCH47N60F |
| SIPC69N60C2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 47A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE | FCH47N60F_F133 vs SIPC69N60C2 |
| R6046FNZ1C9 | ROHM Semiconductor | Check for Price | Power Field-Effect Transistor, 46A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | FCH47N60F_F133 vs R6046FNZ1C9 |
| SIPC61N60S5 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 47A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-1 | FCH47N60F_F133 vs SIPC61N60S5 |
FCH47N60F_F133 Frequently Asked Questions (FAQ)
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The recommended gate resistor value is typically between 10 ohms to 100 ohms, depending on the specific application and switching frequency.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good thermal contact between the device and heat sink. Additionally, ensure good airflow around the heat sink.
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The maximum allowed voltage transient is typically 10% above the maximum rated voltage, but it's recommended to consult with onsemi's application engineers for specific guidance.
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Yes, FCH47N60F_F133 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and thermal management.
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Implement overvoltage protection using a voltage clamp or a zener diode, and overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.