Part Details for FCB36N60NTM by onsemi
Results Overview of FCB36N60NTM by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FCB36N60NTM Information
FCB36N60NTM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FCB36N60NTM
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1885774RL
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Farnell | MOSFET,N CH,600V,36A,D2PAK RoHS: Compliant Min Qty: 5 Lead time: 30 Weeks, 1 Days Container: Reel | 6 |
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$8.2909 | Buy Now |
DISTI #
1885774
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Farnell | MOSFET,N CH,600V,36A,D2PAK RoHS: Compliant Min Qty: 1 Lead time: 30 Weeks, 1 Days Container: Cut Tape | 6 |
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$8.2909 / $9.9966 | Buy Now |
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Bristol Electronics | 547 |
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RFQ | ||
DISTI #
FCB36N60NTM
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Avnet Silica | Trans MOSFET NCH 600V 36A 3Pin2Tab D2PAK (Alt: FCB36N60NTM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
FCB36N60NTM
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EBV Elektronik | Trans MOSFET NCH 600V 36A 3Pin2Tab D2PAK (Alt: FCB36N60NTM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FCB36N60NTM
FCB36N60NTM CAD Models
FCB36N60NTM Part Data Attributes
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FCB36N60NTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FCB36N60NTM
onsemi
Power MOSFET, N-Channel, SUPREMOS®, FAST, 600V, 25A, 125mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | D2PAK-3 / TO-263-2 | |
Manufacturer Package Code | 418AJ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 36 A | |
Drain-source On Resistance-Max | 0.09 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 312 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Time@Peak Reflow Temperature-Max (s) | 30 |
FCB36N60NTM Frequently Asked Questions (FAQ)
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The maximum junction temperature that the FCB36N60NTM can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
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The recommended gate drive voltage for the FCB36N60NTM is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
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Yes, the FCB36N60NTM is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure the device is properly driven to minimize switching losses.
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To protect the FCB36N60NTM from overvoltage and overcurrent, it's recommended to use a voltage clamp or a surge protector to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.