Datasheets
FCB36N60NTM by:

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600V, 25A, 125mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL

Part Details for FCB36N60NTM by onsemi

Results Overview of FCB36N60NTM by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

FCB36N60NTM Information

FCB36N60NTM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FCB36N60NTM

Part # Distributor Description Stock Price Buy
DISTI # 1885774RL
Farnell MOSFET,N CH,600V,36A,D2PAK RoHS: Compliant Min Qty: 5 Lead time: 30 Weeks, 1 Days Container: Reel 6
  • 5 $8.2909
$8.2909 Buy Now
DISTI # 1885774
Farnell MOSFET,N CH,600V,36A,D2PAK RoHS: Compliant Min Qty: 1 Lead time: 30 Weeks, 1 Days Container: Cut Tape 6
  • 1 $9.9966
  • 5 $8.2909
$8.2909 / $9.9966 Buy Now
Bristol Electronics   547
RFQ
DISTI # FCB36N60NTM
Avnet Silica Trans MOSFET NCH 600V 36A 3Pin2Tab D2PAK (Alt: FCB36N60NTM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FCB36N60NTM
EBV Elektronik Trans MOSFET NCH 600V 36A 3Pin2Tab D2PAK (Alt: FCB36N60NTM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FCB36N60NTM

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FCB36N60NTM Part Data Attributes

FCB36N60NTM onsemi
Buy Now Datasheet
Compare Parts:
FCB36N60NTM onsemi Power MOSFET, N-Channel, SUPREMOS®, FAST, 600V, 25A, 125mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code D2PAK-3 / TO-263-2
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Configuration SINGLE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 312 W
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) 30

FCB36N60NTM Related Parts

FCB36N60NTM Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the FCB36N60NTM can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.

  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.

  • The recommended gate drive voltage for the FCB36N60NTM is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.

  • Yes, the FCB36N60NTM is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure the device is properly driven to minimize switching losses.

  • To protect the FCB36N60NTM from overvoltage and overcurrent, it's recommended to use a voltage clamp or a surge protector to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.

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