Datasheets
ES1A-E3/5AT by:

Rectifier Diode, 1 Phase, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

Part Details for ES1A-E3/5AT by Vishay Intertechnologies

Results Overview of ES1A-E3/5AT by Vishay Intertechnologies

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Applications Space Technology Aerospace and Defense Energy and Power Systems

ES1A-E3/5AT Information

ES1A-E3/5AT by Vishay Intertechnologies is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for ES1A-E3/5AT

Part # Distributor Description Stock Price Buy
DISTI # 26AM3245
Newark 1A, 50V, 15Ns, Sma, Uf Rect. Smd |Vishay ES1A-E3/5AT RoHS: Not Compliant Min Qty: 7500 Package Multiple: 1 Date Code: 0 Container: Reel 90000
  • 1 $0.0350
$0.0350 Buy Now
DISTI # 76K4781
Newark 1A, 50V, 15Ns, Sma, Uf Rect. Smd |Vishay ES1A-E3/5AT RoHS: Not Compliant Min Qty: 7500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 5,000 $0.0940
  • 10,000 $0.0830
  • 20,000 $0.0750
  • 30,000 $0.0690
  • 50,000 $0.0640
$0.0640 / $0.0940 Buy Now
DISTI # ES1A-E3/5AT
Avnet Americas 1A, 50V, 15NS, SMA, UF RECT. SMD - Tape and Reel (Alt: ES1A-E3/5AT) RoHS: Compliant Min Qty: 7500 Package Multiple: 7500 Lead time: 5 Weeks, 0 Days Container: Reel 90000
  • 7,500 $0.0342
$0.0342 Buy Now
DISTI # 625-ES1A-E3/5AT
Mouser Electronics Rectifiers 1.0 Amp 50 Volt 30 Amp IFSM RoHS: Compliant 34776
  • 1 $0.3100
  • 10 $0.2050
  • 100 $0.1390
  • 500 $0.1140
  • 1,000 $0.0790
  • 5,000 $0.0650
  • 7,500 $0.0640
  • 22,500 $0.0620
$0.0620 / $0.3100 Buy Now
DISTI # ES1A-E3/5AT
TTI Rectifiers 1.0 Amp 50 Volt 30 Amp IFSM RoHS: Compliant pbFree: Pb-Free Min Qty: 7500 Package Multiple: 7500 Container: Reel Americas - 0
  • 7,500 $0.0520
$0.0520 Buy Now
DISTI # ES1A-E3/5AT
IBS Electronics RECTIFIER DIODE 1 PHASE 1 ELEMENT 1A 50V V(RRM) SILICON DO-214AC Min Qty: 7500 Package Multiple: 1 0
  • 7,500 $0.0493
  • 15,000 $0.0485
  • 22,500 $0.0480
  • 30,000 $0.0477
  • 37,500 $0.0467
$0.0467 / $0.0493 Buy Now
DISTI # ES1A-E3/5AT
EBV Elektronik 1A 50V 15NS SMA UF RECT SMD (Alt: ES1A-E3/5AT) RoHS: Compliant Min Qty: 7500 Package Multiple: 7500 Lead time: 6 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Diodes 36139
RFQ

Part Details for ES1A-E3/5AT

ES1A-E3/5AT CAD Models

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ES1A-E3/5AT Part Data Attributes

ES1A-E3/5AT Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
ES1A-E3/5AT Vishay Intertechnologies Rectifier Diode, 1 Phase, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMA, 2 PIN
Reach Compliance Code not_compliant
Factory Lead Time 5 Weeks
Samacsys Manufacturer Vishay
Additional Feature HIGH RELIABILITY
Application GENERAL PURPOSE
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.865 V
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 50 V
Reverse Recovery Time-Max 0.015 µs
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

Alternate Parts for ES1A-E3/5AT

This table gives cross-reference parts and alternative options found for ES1A-E3/5AT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ES1A-E3/5AT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
ES1A-E3/5AT Vishay Semiconductors Check for Price Diode Switching 50V 1A 2-Pin SMA T/R ES1A-E3/5AT vs ES1A-E3/5AT
ES1A-M3/5AT Vishay Intertechnologies Check for Price Rectifier Diode, 1 Phase, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, SMA, 2 PIN ES1A-E3/5AT vs ES1A-M3/5AT
ES1A-M3/5AT Vishay Semiconductors Check for Price 1A,50V,15NS,UF RECT, SMD ES1A-E3/5AT vs ES1A-M3/5AT
ES1A-E3/61T Vishay Semiconductors Check for Price Diode Switching 50V 1A 2-Pin SMA T/R ES1A-E3/5AT vs ES1A-E3/61T
Part Number Manufacturer Composite Price Description Compare
ES1A-E3/61T Vishay Intertechnologies $0.1480 Rectifier Diode, 1 Phase, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, SMA, 2 PIN ES1A-E3/5AT vs ES1A-E3/61T
ES1AT/R7 PanJit Semiconductor Check for Price Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN ES1A-E3/5AT vs ES1AT/R7

ES1A-E3/5AT Frequently Asked Questions (FAQ)

  • The recommended land pattern for ES1A-E3/5AT is a rectangular pad with a size of 1.5 mm x 2.5 mm, with a solder mask clearance of 0.2 mm around the pad.

  • Yes, ES1A-E3/5AT is rated for operation up to 150°C, making it suitable for high-temperature applications. However, the device's performance and reliability may degrade at extreme temperatures.

  • To prevent damage to the ES1A-E3/5AT's sensitive gate oxide, it is recommended to handle the device with care, avoiding electrostatic discharge (ESD) and using ESD protection devices during handling and assembly.

  • The recommended storage condition for ES1A-E3/5AT is in a dry, cool place with a temperature range of -40°C to 30°C and a relative humidity of 60% or less.

  • Yes, ES1A-E3/5AT is suitable for high-frequency applications up to 100 kHz. However, the device's performance may degrade at higher frequencies, and additional considerations such as parasitic capacitance and inductance should be taken into account.

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