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Part Details for EPC2036 by Efficient Power Conversion
Results Overview of EPC2036 by Efficient Power Conversion
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
EPC2036 Information
EPC2036 by Efficient Power Conversion is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for EPC2036
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
917-1100-1-ND
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DigiKey | GANFET N-CH 100V 1.7A DIE Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
941 In Stock |
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$0.5125 / $1.9700 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 1A I(D), 100V, 0.065OHM, 1-ELEMENT, N-CHANNEL, GALLIUM NITRIDE, METAL-OXIDE SEMICONDUCTOR FET | 2000 |
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$0.6250 / $2.5000 | Buy Now |
Part Details for EPC2036
EPC2036 CAD Models
EPC2036 Part Data Attributes
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EPC2036
Efficient Power Conversion
Buy Now
Datasheet
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EPC2036
Efficient Power Conversion
Power Field-Effect Transistor, 1A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | EFFICIENT POWER CONVERSION CORP | |
| Package Description | DIE-4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Efficient Power Conversion | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XXUC-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Surface Mount | YES | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UNSPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |
EPC2036 Frequently Asked Questions (FAQ)
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The EPC2036 can operate from -55°C to 150°C, making it suitable for high-reliability applications.
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The EPC2036 requires a bias voltage of 5V ± 10% on the VGS pin, and a voltage source of 3.3V ± 10% on the VCC pin. Ensure proper decoupling and filtering to minimize noise and ripple.
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Use a 4-layer PCB with a solid ground plane, and ensure good thermal conductivity by using thermal vias and a heat sink. Keep the device away from high-current paths and noise sources.
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Use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
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Use a high-speed, low-impedance gate drive circuit with a voltage swing of 5V to 10V, and ensure a rise and fall time of < 10 ns to minimize switching losses.