Datasheets
EPC2016C by:

Power Field-Effect Transistor, 18A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6

Part Details for EPC2016C by Efficient Power Conversion

Results Overview of EPC2016C by Efficient Power Conversion

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Applications Environmental Monitoring Industrial Automation

EPC2016C Information

EPC2016C by Efficient Power Conversion is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for EPC2016C

Part # Distributor Description Stock Price Buy
DISTI # 917-1080-1-ND
DigiKey GANFET N-CH 100V 18A DIE Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 67837
In Stock
  • 1 $3.4000
  • 10 $2.2190
  • 100 $1.5445
  • 500 $1.3311
  • 2,500 $1.0875
$1.0875 / $3.4000 Buy Now
Vyrian Transistors 101905
RFQ

Part Details for EPC2016C

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EPC2016C Part Data Attributes

EPC2016C Efficient Power Conversion
Buy Now Datasheet
Compare Parts:
EPC2016C Efficient Power Conversion Power Field-Effect Transistor, 18A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer EFFICIENT POWER CONVERSION CORP
Package Description HALOGEN FREE AND ROHS COMPLIANT, DIE-6
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XXUC-X6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 75 A
Surface Mount YES
Terminal Form UNSPECIFIED
Terminal Position UNSPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material GALLIUM NITRIDE

Alternate Parts for EPC2016C

This table gives cross-reference parts and alternative options found for EPC2016C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EPC2016C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
CSD19534Q5AT Texas Instruments $1.9946 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150 EPC2016C vs CSD19534Q5AT
BSC159N10LSFG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0159ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 EPC2016C vs BSC159N10LSFG

EPC2016C Related Parts

EPC2016C Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the EPC2016C is -55°C to 150°C.

  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels outlined in the datasheet, and ensure the device is operated within the recommended voltage and current ranges.

  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane, and ensure good thermal conductivity between the device and the PCB. Follow the recommended land pattern and thermal pad layout in the datasheet.

  • Handle the EPC2016C with ESD-protective equipment and follow proper ESD handling procedures to prevent damage. Use an ESD wrist strap or mat, and ensure the workspace is ESD-protected.

  • Follow the recommended soldering and rework conditions outlined in the datasheet, including temperature profiles and dwell times, to ensure reliable assembly and minimize the risk of damage.

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