Part Details for EN25QH32B-104HIP2B by Elite Semiconductor Memory Technology Inc
Results Overview of EN25QH32B-104HIP2B by Elite Semiconductor Memory Technology Inc
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
EN25QH32B-104HIP2B Information
EN25QH32B-104HIP2B by Elite Semiconductor Memory Technology Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for EN25QH32B-104HIP2B
EN25QH32B-104HIP2B CAD Models
EN25QH32B-104HIP2B Part Data Attributes
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EN25QH32B-104HIP2B
Elite Semiconductor Memory Technology Inc
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Datasheet
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EN25QH32B-104HIP2B
Elite Semiconductor Memory Technology Inc
Flash, 4MX8, PDSO8, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | |
| Package Description | SOP, | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Date Of Intro | 2017-08-07 | |
| Alternate Memory Width | 1 | |
| Clock Frequency-Max (fCLK) | 104 MHz | |
| Data Retention Time-Min | 20 | |
| Endurance | 100000 Write/Erase Cycles | |
| JESD-30 Code | S-PDSO-G8 | |
| Length | 5.275 mm | |
| Memory Density | 33554432 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Terminals | 8 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 4MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | SOP | |
| Package Equivalence Code | SOP8,.3 | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Parallel/Serial | SERIAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Programming Voltage | 3 V | |
| Seated Height-Max | 2.2 mm | |
| Serial Bus Type | SPI | |
| Standby Current-Max | 0.00002 A | |
| Supply Current-Max | 0.02 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Type | NOR TYPE | |
| Width | 5.275 mm | |
| Write Protection | HARDWARE/SOFTWARE |
EN25QH32B-104HIP2B Frequently Asked Questions (FAQ)
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The EN25QH32B-104HIP2B supports up to 100,000 erase cycles.
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The EN25QH32B-104HIP2B uses a page write operation that allows writing data to a specific page (typically 256 bytes) within the flash memory.
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The WP# (Write Protect) pin is used to prevent accidental writes to the status register and the memory array. When WP# is low, the device is in write-protect mode.
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The EN25QH32B-104HIP2B has a built-in power-on reset circuit that ensures the device is in a known state after power-up.
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The recommended operating voltage range for the EN25QH32B-104HIP2B is 2.7V to 3.6V.