Part Details for EDB2432B4MA-1DIT-F-R by Micron Technology Inc
Results Overview of EDB2432B4MA-1DIT-F-R by Micron Technology Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Financial Technology (Fintech)
Healthcare
Telecommunications
EDB2432B4MA-1DIT-F-R Information
EDB2432B4MA-1DIT-F-R by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| LM2917M-8 | Texas Instruments | Frequency to Voltage Converter 8-SOIC -40 to 85 | |
| LM2917MX/NOPB | Texas Instruments | Frequency to Voltage Converter 14-SOIC -40 to 85 | |
| LM2917N-8/NOPB | Texas Instruments | Frequency to Voltage Converter 8-PDIP -40 to 85 |
Price & Stock for EDB2432B4MA-1DIT-F-R
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
EDB2432B4MA-1DIT-F-R
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Avnet Silica | DRAM Chip Mobile LPDDR2 SDRAM 2GBit 64Mx32 18V 134Pin VFBGA TR (Alt: EDB2432B4MA-1DIT-F-R) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
EDB2432B4MA-1DIT-F-R
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EBV Elektronik | DRAM Chip Mobile LPDDR2 SDRAM 2GBit 64Mx32 18V 134Pin VFBGA TR (Alt: EDB2432B4MA-1DIT-F-R) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 | EBV - 0 |
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Buy Now |
Part Details for EDB2432B4MA-1DIT-F-R
EDB2432B4MA-1DIT-F-R CAD Models
EDB2432B4MA-1DIT-F-R Part Data Attributes
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EDB2432B4MA-1DIT-F-R
Micron Technology Inc
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Datasheet
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EDB2432B4MA-1DIT-F-R
Micron Technology Inc
DDR DRAM, 64MX32, CMOS, PBGA134, VFBGA-134
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | VFBGA, | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Samacsys Manufacturer | Micron | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Additional Feature | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | |
| JESD-30 Code | R-PBGA-B134 | |
| JESD-609 Code | e1 | |
| Length | 11.5 mm | |
| Memory Density | 2147483648 bit | |
| Memory IC Type | LPDDR2 DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 134 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 64MX32 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Seated Height-Max | 1 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 1.3 V | |
| Supply Voltage-Min (Vsup) | 1.14 V | |
| Supply Voltage-Nom (Vsup) | 1.2 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Width | 10 mm |
Alternate Parts for EDB2432B4MA-1DIT-F-R
This table gives cross-reference parts and alternative options found for EDB2432B4MA-1DIT-F-R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDB2432B4MA-1DIT-F-R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| EDB2432B4MA-1DAUT-F-RTR | Micron Technology Inc | Check for Price | DDR DRAM, | EDB2432B4MA-1DIT-F-R vs EDB2432B4MA-1DAUT-F-RTR |
EDB2432B4MA-1DIT-F-R Frequently Asked Questions (FAQ)
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The maximum operating temperature range for EDB2432B4MA-1DIT-F-R is 0°C to 95°C.
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To ensure signal integrity, it is recommended to use a signal integrity analysis tool to simulate the signal behavior and optimize the PCB design. Additionally, following the JEDEC standard for DDR4 SDRAM signal routing and termination is crucial.
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The recommended refresh rate for EDB2432B4MA-1DIT-F-R is 8192 refreshes per second, with a refresh interval of 7.8us.
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The EDB2432B4MA-1DIT-F-R is designed to operate at a voltage supply of 1.2V, and it is not recommended to use it with a different voltage supply. Using a different voltage supply may affect the performance and reliability of the device.
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The EDB2432B4MA-1DIT-F-R has built-in error correction mechanisms, such as ECC (Error-Correcting Code) and CRC (Cyclic Redundancy Check). In case of errors, the device can retry the operation up to a certain number of times before reporting an error to the system.