Part Details for DS1230Y-70IND by Maxim Integrated Products
Results Overview of DS1230Y-70IND by Maxim Integrated Products
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
DS1230Y-70IND Information
DS1230Y-70IND by Maxim Integrated Products is an SRAM.
SRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for DS1230Y-70IND
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Vyrian | Memory ICs | 827 |
|
RFQ |
Part Details for DS1230Y-70IND
DS1230Y-70IND CAD Models
DS1230Y-70IND Part Data Attributes
|
|
DS1230Y-70IND
Maxim Integrated Products
Buy Now
Datasheet
|
Compare Parts:
DS1230Y-70IND
Maxim Integrated Products
Non-Volatile SRAM Module, 32KX8, 70ns, CMOS, 0.740 INCH, DIP-28
|
| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MAXIM INTEGRATED PRODUCTS INC | |
| Part Package Code | MODULE | |
| Package Description | 0.740 INCH, DIP-28 | |
| Pin Count | 28 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8473.30.11.40 | |
| Access Time-Max | 70 ns | |
| JESD-30 Code | R-XDMA-P28 | |
| JESD-609 Code | e0 | |
| Memory Density | 262144 bit | |
| Memory IC Type | NON-VOLATILE SRAM MODULE | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Terminals | 28 | |
| Number of Words | 32768 words | |
| Number of Words Code | 32000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32KX8 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIP | |
| Package Equivalence Code | DIP28,.6 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.085 mA | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Supply Voltage-Min (Vsup) | 4.5 V | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Pitch | 2.54 mm | |
| Terminal Position | DUAL |
Alternate Parts for DS1230Y-70IND
This table gives cross-reference parts and alternative options found for DS1230Y-70IND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DS1230Y-70IND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| DS1230Y-70+ | Analog Devices Inc | $35.3203 | 256k Nonvolatile SRAM, N/A, 28 Pins, 0 to 70C | DS1230Y-70IND vs DS1230Y-70+ |
| DS1230Y-70IND+ | Maxim Integrated Products | $37.5705 | Non-Volatile SRAM Module, 32KX8, 70ns, CMOS, 0.740 INCH, ROHS COMPLIANT, DIP-28 | DS1230Y-70IND vs DS1230Y-70IND+ |
| DS1230AB-70 | Maxim Integrated Products | Check for Price | Non-Volatile SRAM Module, 32KX8, 70ns, CMOS, 0.740 INCH, DIP-28 | DS1230Y-70IND vs DS1230AB-70 |
| DS1630Y-70 | Dallas Semiconductor | Check for Price | Non-Volatile SRAM Module, 32KX8, 70ns, CMOS, | DS1230Y-70IND vs DS1630Y-70 |
| DS1230AB-70+ | Analog Devices Inc | Check for Price | 256k Nonvolatile SRAM, N/A, 28 Pins, 0 to 70C | DS1230Y-70IND vs DS1230AB-70+ |
| BQ4011YMA-70N | Benchmarq Microelectronics Inc | Check for Price | Non-Volatile SRAM Module, 32KX8, 70ns, CMOS, PDIP28, | DS1230Y-70IND vs BQ4011YMA-70N |
| DS1230Y-70IND+ | Analog Devices Inc | Check for Price | 256k Nonvolatile SRAM, N/A, 28 Pins, -40 to 85C | DS1230Y-70IND vs DS1230Y-70IND+ |
| DS1230AB-70IND | Maxim Integrated Products | Check for Price | Non-Volatile SRAM Module, 32KX8, 70ns, CMOS, 0.740 INCH, DIP-28 | DS1230Y-70IND vs DS1230AB-70IND |
| BQ4011YMA-70 | Texas Instruments | Check for Price | 32KX8 NON-VOLATILE SRAM MODULE, 70ns, PDIP28 | DS1230Y-70IND vs BQ4011YMA-70 |
| DS1230Y-70 | Maxim Integrated Products | Check for Price | Non-Volatile SRAM Module, 32KX8, 70ns, CMOS, 0.740 INCH, DIP-28 | DS1230Y-70IND vs DS1230Y-70 |
DS1230Y-70IND Frequently Asked Questions (FAQ)
-
The recommended layout and placement for the DS1230Y-70IND involves keeping the device away from high-current carrying traces, using a solid ground plane, and placing bypass capacitors close to the device. Additionally, the device should be placed near the battery or power source to minimize voltage drops.
-
The DS1230Y-70IND is designed to operate over a wide input voltage range of 2.7V to 5.5V, making it tolerant of battery voltage fluctuations. However, it's essential to ensure that the input voltage remains within the specified range to maintain device functionality and accuracy.
-
The typical start-up time for the DS1230Y-70IND is around 100ms to 200ms, depending on the input voltage and capacitance. This start-up time is relatively fast, allowing the device to quickly respond to power-on events.
-
The DS1230Y-70IND is rated for operation up to 70°C, making it suitable for most industrial and commercial applications. However, for high-temperature applications above 70°C, it's recommended to consult with Maxim Integrated Products or use a different device specifically designed for high-temperature operation.
-
The DS1230Y-70IND has built-in noise and EMI filtering, including a low-pass filter on the input and a noise-rejection circuit. Additionally, the device's high-frequency noise immunity helps to minimize the impact of electromagnetic interference (EMI) on its operation.