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Part Details for DMN26D0UFB4-7 by Diodes Incorporated
Results Overview of DMN26D0UFB4-7 by Diodes Incorporated
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
DMN26D0UFB4-7 Information
DMN26D0UFB4-7 by Diodes Incorporated is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for DMN26D0UFB4-7
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.24A I(D), 20V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 66966 |
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$0.0277 / $0.2520 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.24A I(D), 20V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1204 |
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$0.0783 / $0.2610 | Buy Now |
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DISTI #
DMN26D0UFB4-7
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TME | Transistor: N-MOSFET, unipolar, 20V, 0.18A, 0.35W, X1-DFN1006-3 Min Qty: 5 | 0 |
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$0.0330 / $0.1436 | RFQ |
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DISTI #
DMN26D0UFB4-7
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IBS Electronics | SINGLE N-CHANNEL 20 V 350 MW SILICON SURFACE MOUNT MOSFET - DFN-3 Min Qty: 3000 Package Multiple: 1 | 0 |
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$0.0251 / $0.0277 | Buy Now |
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DISTI #
DMN26D0UFB4-7
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Avnet Silica | Trans MOSFET NCH 20V 024A 3Pin X2DFN TR (Alt: DMN26D0UFB4-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | Silica - 0 |
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Buy Now | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 222 |
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$1.2500 / $1.9200 | Buy Now |
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MacroQuest Electronics | STOCK | 24000 |
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$0.0500 / $0.0700 | Buy Now |
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Vyrian | Transistors | 34339 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 20V 230MA DFN | 291000 |
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$0.0667 / $0.0861 | Buy Now |
Part Details for DMN26D0UFB4-7
DMN26D0UFB4-7 CAD Models
DMN26D0UFB4-7 Part Data Attributes
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DMN26D0UFB4-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN26D0UFB4-7
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.24A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC, CASE DFN1006H4-3, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | DIODES INC | |
| Part Package Code | DFN | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE DFN1006H4-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Additional Feature | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 0.24 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PBCC-N3 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.35 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
DMN26D0UFB4-7 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the DMN26D0UFB4-7 is -55°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow around the device.
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The maximum allowable power dissipation for the DMN26D0UFB4-7 is 2.5W. Exceeding this limit can lead to device failure.
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Yes, the DMN26D0UFB4-7 is suitable for use in switching regulator applications due to its fast switching times and low voltage drop.
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To protect the DMN26D0UFB4-7 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag when not in use.