Part Details for DF900R12IP4DV by Infineon Technologies AG
Results Overview of DF900R12IP4DV by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
DF900R12IP4DV Information
DF900R12IP4DV by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for DF900R12IP4DV
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-DF900R12IP4DV
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Mouser Electronics | IGBT Modules PP IHM I RoHS: Compliant | 0 |
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Part Details for DF900R12IP4DV
DF900R12IP4DV CAD Models
DF900R12IP4DV Part Data Attributes
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DF900R12IP4DV
Infineon Technologies AG
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Datasheet
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DF900R12IP4DV
Infineon Technologies AG
Insulated Gate Bipolar Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X10 | |
| Number of Elements | 1 | |
| Number of Terminals | 10 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 5100 W | |
| Reference Standard | UL APPROVED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1300 ns | |
| Turn-on Time-Nom (ton) | 370 ns | |
| VCEsat-Max | 2.05 V |