Part Details for DF900R12IP4DBOSA1 by Infineon Technologies AG
Results Overview of DF900R12IP4DBOSA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
DF900R12IP4DBOSA1 Information
DF900R12IP4DBOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for DF900R12IP4DBOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-DF900R12IP4DBOSA1-ND
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DigiKey | IGBT MOD 1200V 900A 5100W Min Qty: 3 Lead time: 14 Weeks Container: Tray | Temporarily Out of Stock |
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$395.7267 | Buy Now |
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DISTI #
DF900R12IP4DBOSA1
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Avnet Americas | - Trays (Alt: DF900R12IP4DBOSA1) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks, 0 Days Container: Tray | 0 |
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$440.0462 | Buy Now |
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DISTI #
SP000721126
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EBV Elektronik | IGBT Module NCH 1200V 900A 10pin PRIME21 (Alt: SP000721126) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for DF900R12IP4DBOSA1
DF900R12IP4DBOSA1 CAD Models
DF900R12IP4DBOSA1 Part Data Attributes
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DF900R12IP4DBOSA1
Infineon Technologies AG
Buy Now
Datasheet
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DF900R12IP4DBOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-10
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-10 | |
| Pin Count | 10 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 900 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | |
| JESD-30 Code | R-XUFM-X6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1300 ns | |
| Turn-on Time-Nom (ton) | 370 ns |
DF900R12IP4DBOSA1 Frequently Asked Questions (FAQ)
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The thermal resistance (Rth) of the DF900R12IP4DBOSA1 is typically around 0.5 K/W (junction-to-case) and 1.5 K/W (junction-to-ambient) when mounted on a standard PCB.
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To ensure reliability, follow the recommended operating temperature range (TJ) of -40°C to 150°C, and consider using a heat sink or thermal interface material to reduce thermal resistance. Also, ensure proper PCB design, layout, and thermal management.
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The recommended gate drive voltage for the DF900R12IP4DBOSA1 is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.
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Yes, the DF900R12IP4DBOSA1 can be used in a parallel configuration to increase power handling. However, ensure that the devices are properly matched, and the gate drive and layout are designed to minimize differences in switching times and thermal performance.
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The maximum allowed voltage imbalance between the DC-link and the output voltage in the DF900R12IP4DBOSA1 is typically around 10% to 15% of the DC-link voltage.