Part Details for DF100R07W1H5FPB54BPSA2 by Infineon Technologies AG
Results Overview of DF100R07W1H5FPB54BPSA2 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
DF100R07W1H5FPB54BPSA2 Information
DF100R07W1H5FPB54BPSA2 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for DF100R07W1H5FPB54BPSA2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
22AJ2150
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Newark | Igbt, Dual, 650V, 50A, Module, Continuous Collector Current:50A, Collector Emitter Saturation Voltage:1.35V, Power Dissipation:-, Operating Temperature Max:150°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:650V Rohs Compliant: Yes |Infineon DF100R07W1H5FPB54BPSA2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$60.8800 / $73.1800 | Buy Now |
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DISTI #
2156-DF100R07W1H5FPB54BPSA2-448-ND
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DigiKey | IGBT MOD 650V 40A 20MW Min Qty: 1 Lead time: 12 Weeks Container: Bulk MARKETPLACE PRODUCT |
67 In Stock |
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$29.5200 | Buy Now |
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DISTI #
DF100R07W1H5FPB54BPSA2-ND
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DigiKey | IGBT MOD 650V 40A 20MW Min Qty: 1 Lead time: 12 Weeks Container: Tray |
2 In Stock |
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$26.9603 / $39.8800 | Buy Now |
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DISTI #
DF100R07W1H5FPB54BPSA2
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Avnet Americas | Transistor Silicon Carbide IGBT Module N-CH 650V 40A 20V Screw Mount Tray - Trays (Alt: DF100R07W1H5FPB54BPSA2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 12 Weeks, 0 Days Container: Tray | 0 |
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$29.9799 | Buy Now |
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DISTI #
726-DFW1H5FPB54BPSA2
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Mouser Electronics | IGBT Modules 650 V, 100 A booster IGBT module RoHS: Compliant | 9 |
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$26.9600 / $38.8900 | Buy Now |
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DISTI #
85978834
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Verical | Module with TRENCH STOP and CoolSiC diode Min Qty: 25 Package Multiple: 1 Date Code: 2101 | Americas - 60 |
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$35.4750 | Buy Now |
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DISTI #
85978669
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Verical | Module with TRENCH STOP and CoolSiC diode Min Qty: 25 Package Multiple: 1 Date Code: 2201 | Americas - 37 |
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$35.4750 | Buy Now |
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Rochester Electronics | DFXR07 - LOW POWER EASY RoHS: Compliant Status: Active Min Qty: 1 | 119 |
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$22.7000 / $28.3800 | Buy Now |
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Cytech Systems Limited | IGBT MOD 650V 40A 20MW | 30 |
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RFQ | |
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DISTI #
SP001650156
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EBV Elektronik | Transistor Silicon Carbide IGBT Module NCH 650V 40A 20V Screw Mount Tray (Alt: SP001650156) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 13 Weeks, 0 Days | EBV - 120 |
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Buy Now |
Part Details for DF100R07W1H5FPB54BPSA2
DF100R07W1H5FPB54BPSA2 CAD Models
DF100R07W1H5FPB54BPSA2 Part Data Attributes
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DF100R07W1H5FPB54BPSA2
Infineon Technologies AG
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Datasheet
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DF100R07W1H5FPB54BPSA2
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-14 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 40 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 4.75 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X14 | |
| Number of Elements | 2 | |
| Number of Terminals | 14 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-61140 | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 30 ns | |
| Turn-on Time-Nom (ton) | 12.6 ns | |
| VCEsat-Max | 1.55 V |
DF100R07W1H5FPB54BPSA2 Frequently Asked Questions (FAQ)
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The thermal resistance (Rth) of the DF100R07W1H5FPB54BPSA2 is typically around 0.5 K/W (junction-to-case) and 1.5 K/W (junction-to-ambient) when mounted on a standard PCB.
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To ensure reliability, follow the recommended operating temperature range (TJ) of -40°C to 175°C, and consider derating the power dissipation at higher temperatures. Also, ensure proper thermal management, such as using a heat sink or thermal interface material, and follow the recommended PCB layout and assembly guidelines.
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The recommended gate drive voltage for the DF100R07W1H5FPB54BPSA2 is typically between 10 V and 15 V, with a maximum gate-source voltage (VGS) of ±20 V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements.
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Yes, the DF100R07W1H5FPB54BPSA2 can be used in a parallel configuration to increase power handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize differences in switching times and thermal performance between devices.
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The DF100R07W1H5FPB54BPSA2 has an integrated ESD protection diode, but it's still essential to follow proper ESD handling and storage procedures to prevent damage. The device can withstand ESD pulses up to 2 kV according to the Human Body Model (HBM) and 150 V according to the Machine Model (MM).