Datasheets
DB207S by:

Surface Mount Bridge Rectifier; VRRM Max (V): 1000V; IAV Max (A): 2A; VFM Max (V): 1.1V; @ IF (A): 2A; IFSM Max (A): 60A; IR Max (UA): 5uA; @VR (V): 1000V; TRR Max (NS): -; Package: DFS

Part Details for DB207S by Galaxy Microelectronics

Results Overview of DB207S by Galaxy Microelectronics

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Applications Space Technology Aerospace and Defense Energy and Power Systems

DB207S Information

DB207S by Galaxy Microelectronics is a Bridge Rectifier Diode.
Bridge Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Part Details for DB207S

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DB207S Part Data Attributes

DB207S Galaxy Microelectronics
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DB207S Galaxy Microelectronics Surface Mount Bridge Rectifier; VRRM Max (V): 1000V; IAV Max (A): 2A; VFM Max (V): 1.1V; @ IF (A): 2A; IFSM Max (A): 60A; IR Max (UA): 5uA; @VR (V): 1000V; TRR Max (NS): -; Package: DFS
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code DFS
Reach Compliance Code unknown
ECCN Code EAR99
Breakdown Voltage-Min 1000 V
Configuration BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
JESD-609 Code e3
Non-rep Pk Forward Current-Max 60 A
Number of Elements 4
Number of Phases 1
Operating Temperature-Max 125 °C
Output Current-Max 2 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 1000 V
Surface Mount YES
Terminal Finish MATTE TIN

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