Datasheets
D1481N65T by:

Rectifier Diode, 1 Phase, 1 Element, 2160A, 6500V V(RRM), Silicon,

Part Details for D1481N65T by Infineon Technologies AG

Results Overview of D1481N65T by Infineon Technologies AG

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Applications Internet of Things (IoT) Environmental Monitoring Space Technology Industrial Automation Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Automotive Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Aerospace and Defense Healthcare Renewable Energy Electronic Manufacturing Communication and Networking Robotics and Drones

D1481N65T Information

D1481N65T by Infineon Technologies AG is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for D1481N65T

Part # Distributor Description Stock Price Buy
DISTI # SP000096630
EBV Elektronik Diode 65KV 216KA 2Pin (Alt: SP000096630) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 37 Weeks, 0 Days EBV - 0
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Part Details for D1481N65T

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D1481N65T Part Data Attributes

D1481N65T Infineon Technologies AG
Buy Now Datasheet
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D1481N65T Infineon Technologies AG Rectifier Diode, 1 Phase, 1 Element, 2160A, 6500V V(RRM), Silicon,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description O-CEDB-N2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Infineon
Application GENERAL PURPOSE
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.9 V
JESD-30 Code O-CEDB-N2
Non-rep Pk Forward Current-Max 20000 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 160 °C
Output Current-Max 2160 A
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 6500 V
Surface Mount YES
Terminal Form NO LEAD
Terminal Position END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Alternate Parts for D1481N65T

This table gives cross-reference parts and alternative options found for D1481N65T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of D1481N65T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
D1481N65T Eupec Gmbh & Co Kg Check for Price Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2300A, 6500V V(RRM), Silicon, D1481N65T vs D1481N65T

D1481N65T Related Parts

D1481N65T Frequently Asked Questions (FAQ)

  • The maximum junction temperature (Tj) for the D1481N65T is 175°C. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.

  • Proper cooling is crucial for the D1481N65T. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, consider using a thermal interface material (TIM) to fill any gaps between the device and heat sink.

  • The recommended gate drive voltage for the D1481N65T is between 10V and 15V. However, the device can tolerate up to 20V gate drive voltage. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.

  • Yes, the D1481N65T is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic inductances when designing the circuit. Additionally, ensure the device is properly cooled to prevent overheating.

  • To protect the D1481N65T from overvoltage and overcurrent, use a suitable voltage clamp or surge protector, and consider adding overcurrent protection (OCP) and overtemperature protection (OTP) circuits to your design. Also, ensure the device is operated within its recommended operating conditions.

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