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Part Details for CSD85312Q3E by Texas Instruments
Results Overview of CSD85312Q3E by Texas Instruments
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD85312Q3E Information
CSD85312Q3E by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD85312Q3E
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-37187-1-ND
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DigiKey | MOSFET 2N-CH 20V 39A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6642 In Stock |
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$0.4625 / $1.2200 | Buy Now |
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DISTI #
2156-CSD85312Q3E-ND
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DigiKey | MOSFET 2N-CH 20V 39A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Bulk MARKETPLACE PRODUCT |
6458 In Stock |
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$0.5500 | Buy Now |
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DISTI #
595-CSD85312Q3E
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Mouser Electronics | MOSFETs Dual 20V N-CH Pwr MO SFETs RoHS: Compliant | 1286 |
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$0.4060 / $1.2000 | Buy Now |
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DISTI #
85973293
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Verical | Power MOSFET 8-Pin VSON EP T/R RoHS: Compliant Min Qty: 572 Package Multiple: 1 Date Code: 1501 | Americas - 4000 |
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$0.6563 | Buy Now |
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DISTI #
85973702
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Verical | Power MOSFET 8-Pin VSON EP T/R RoHS: Compliant Min Qty: 572 Package Multiple: 1 Date Code: 1401 | Americas - 2029 |
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$0.6563 | Buy Now |
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Rochester Electronics | CSD85312Q3E 20V, N Channel NexFET MOSFET, dual common source SON3x3, 14mOhm RoHS: Compliant Status: Active Min Qty: 1 | 6458 |
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$0.3255 / $0.5250 | Buy Now |
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Cytech Systems Limited | MOSFET 2N-CH 20V 39A 8VSON | 7500 |
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RFQ | |
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Vyrian | Transistors | 7287 |
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RFQ |
Part Details for CSD85312Q3E
CSD85312Q3E CAD Models
CSD85312Q3E Part Data Attributes
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CSD85312Q3E
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD85312Q3E
Texas Instruments
20-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3, 14 mOhm 8-VSON -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | VSON-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 72 mJ | |
| Case Connection | SOURCE | |
| Configuration | COMPLEX | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 39 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 40 pF | |
| JESD-30 Code | S-PDSO-N4 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2.5 W | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 76 A | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Resources and Additional Insights for CSD85312Q3E
Reference Designs related to CSD85312Q3E
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CISPR 25 Class 5 400-kHz rated 12-W automotive USB Type-A charger reference design
This reference design is an EMI-optimized design for automotive USB Type-A charger with single 12-W output. The TPS25846-Q1 is used as DC-DC regulator and port controller. The switching frequency is 400kHz. The front-end filter is designed and PCB layout is optimized to pass stringent CISPR 25 Class 5 Conducted Electromagnetic Interference (EMI) standards. This reference design has already been tested to CISPR 25 Class 5 conducted EMI standards: which accelerates design time.
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Automotive USB Type-A charger reference design with 3-m USB-IF near-end compliant
This reference design is for an automotive USB Type-A charger with 3 meters USB-IF near-end compliant. The TPS25840-Q1 is used as DC-DC regulator and data switch and TUSB217-Q1 is used as high speed signal conditioner to improve signal quality. The efficiency of the solution is 93.3% at a 12-W output: which leads to only 20.5 °C temperature rise. Programmable cable droop compensation helps portable devices charge at optimum current and voltage under heavy loads. USB 2.0 high-speed near-end eye compliance test is passed on the design with a cable as long as 3 meters.
CSD85312Q3E Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the CSD85312Q3E is -40°C to 150°C.
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To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum equivalent series resistance (ESR) of 1 ohm.
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The recommended input capacitance for the CSD85312Q3E is 10uF to 22uF, with a voltage rating of 6.3V or higher.
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The power dissipation of the CSD85312Q3E can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.
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The maximum output current of the CSD85312Q3E is 3A.