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Part Details for CSD25481F4T by Texas Instruments
Results Overview of CSD25481F4T by Texas Instruments
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD25481F4T Information
CSD25481F4T by Texas Instruments is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD25481F4T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26AJ5585
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Newark | Mosfet, P-Channel, -20V, -2.5A, Lga-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-2.5A, Drain Source Voltage Vds:-20V, On Resistance Rds(On):0.075Ohm, Rds(On) Test Voltage Vgs:-8V, Threshold Voltage Vgs:-950Mv, Powerrohs Compliant: Yes |Texas Instruments CSD25481F4T RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 176 |
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$1.0600 / $1.3300 | Buy Now |
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DISTI #
296-37750-1-ND
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DigiKey | MOSFET P-CH 20V 2.5A 3PICOSTAR Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1511 In Stock |
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$0.3212 / $1.1200 | Buy Now |
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DISTI #
595-CSD25481F4T
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Mouser Electronics | MOSFETs 20V PCh FemtoFET MO SFET A 595-CSD25481F4 RoHS: Compliant | 1116 |
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$0.3210 / $1.0700 | Buy Now |
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DISTI #
V72:2272_07248890
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Arrow Electronics | Trans MOSFET P-CH 20V 2.5A 3-Pin PicoStar T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2229 Container: Cut Strips | Americas - 230 |
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$0.1694 / $0.3257 | Buy Now |
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Rochester Electronics | CSD25481F4 -20V, P Channel NexFET MOSFET, single LGA 0.6x1.0, 105mOhm RoHS: Compliant Status: Active Min Qty: 1 | 250 |
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$0.2698 / $0.4352 | Buy Now |
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DISTI #
CSD25481F4T
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TME | Transistor: P-MOSFET, unipolar, -20V, -2.5A, Idm: -13.1A, 500mW Min Qty: 1 | 0 |
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$0.4580 / $0.8080 | RFQ |
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Vyrian | Transistors | 1433 |
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RFQ | |
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Win Source Electronics | MOSFET P-CH 20V 2.5A 3PICOSTAR | 57000 |
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$0.1097 / $0.1640 | Buy Now |
Part Details for CSD25481F4T
CSD25481F4T CAD Models
CSD25481F4T Part Data Attributes
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CSD25481F4T
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD25481F4T
Texas Instruments
-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | LGA, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.40 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | -2.5 A | |
| Drain-source On Resistance-Max | 0.174 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5.5 pF | |
| JESD-30 Code | R-PBGA-B3 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Gold (Ni/Au) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for CSD25481F4T
This table gives cross-reference parts and alternative options found for CSD25481F4T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD25481F4T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD25481F4 | Texas Instruments | $0.1177 | -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 | CSD25481F4T vs CSD25481F4 |
CSD25481F4T Frequently Asked Questions (FAQ)
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For optimal thermal performance, it is recommended to use a 2-layer or 4-layer PCB with a solid ground plane on the bottom layer, and to place thermal vias under the device to dissipate heat efficiently.
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To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and use a stable voltage regulator to minimize noise and ripple.
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To ensure EMI and EMC compliance, use a shielded enclosure, keep sensitive analog signals away from digital signals, and use a common-mode choke or ferrite bead to filter out high-frequency noise.
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While the CSD25481F4T is rated for operation up to 125°C, it's essential to consider the device's power dissipation, thermal resistance, and package type when designing for high-temperature applications.
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To troubleshoot issues, start by verifying the device is properly biased and configured, then use oscilloscopes and logic analyzers to debug the signal paths and identify potential issues.