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Part Details for CSD19538Q3AT by Texas Instruments
Results Overview of CSD19538Q3AT by Texas Instruments
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD19538Q3AT Information
CSD19538Q3AT by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD19538Q3AT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-44473-1-ND
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DigiKey | MOSFET N-CH 100V 15A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) | Temporarily Out of Stock |
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$0.4575 / $1.4500 | Buy Now |
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DISTI #
595-CSD19538Q3AT
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Mouser Electronics | MOSFETs 100-V N channel Nex FET power MOSFET s A 595-CSD19538Q3A RoHS: Compliant | 54 |
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$0.4570 / $0.7500 | Buy Now |
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DISTI #
V72:2272_16019091
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Arrow Electronics | Trans MOSFET N-CH Si 100V 15A 8-Pin VSONP EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks Date Code: 2304 Container: Cut Strips | Americas - 35 |
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$0.4693 / $0.4853 | Buy Now |
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DISTI #
66400153
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Verical | Trans MOSFET N-CH Si 100V 15A 8-Pin VSONP EP T/R RoHS: Compliant Min Qty: 13 Package Multiple: 1 Date Code: 2304 | Americas - 35 |
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$0.4693 / $0.4773 | Buy Now |
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Bristol Electronics | 1029 |
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Bristol Electronics | Min Qty: 4 | 209 |
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$0.4200 / $1.3125 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 4.9A I(D), 100V, 0.072OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 823 |
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$0.6600 / $1.6500 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 4.9A I(D), 100V, 0.072OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 167 |
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$0.5250 / $1.7500 | Buy Now |
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DISTI #
CSD19538Q3AT
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TME | Transistor: N-MOSFET, unipolar, 100V, 15A, 23W, VSONP8, 3.3x3.3mm Min Qty: 1 | 691 |
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$0.5480 / $0.9610 | Buy Now |
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ComSIT USA | 100 V N-CHANNEL NEXFET POWER MOSFET Power Field-Effect Transistor, 4.9A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ |
Part Details for CSD19538Q3AT
CSD19538Q3AT CAD Models
CSD19538Q3AT Part Data Attributes
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CSD19538Q3AT
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD19538Q3AT
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 61 mOhm 8-VSONP -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | VSONP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Date Of Intro | 2016-06-02 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 8.1 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.072 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 16.4 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 23 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
CSD19538Q3AT Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
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Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a high-quality decoupling capacitor (e.g., 10uF) close to the device. Verify the output voltage (VOUT) is within the specified range (0.8V to 3.3V).
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A 10uF to 22uF ceramic capacitor (X5R or X7R dielectric) is recommended for input decoupling. Place the capacitor as close to the VIN pin as possible.
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The device has a built-in thermal shutdown feature that activates when the junction temperature exceeds 150°C. Ensure proper heat sinking and airflow in your design. Monitor the device's temperature and implement a thermal shutdown response in your system design.
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A 10uF to 22uF ceramic capacitor (X5R or X7R dielectric) is recommended for output filtering. Place the capacitor as close to the VOUT pin as possible.