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100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 61 mOhm 8-VSONP -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD19538Q3A by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-44352-1-ND
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DigiKey | MOSFET N-CH 100V 15A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
976 In Stock |
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$0.1888 / $0.6800 | Buy Now |
DISTI #
595-CSD19538Q3A
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Mouser Electronics | MOSFETs 100-V N channel Nex FET power MOSFET s A 595-CSD19538Q3AT RoHS: Compliant | 0 |
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$0.2050 / $0.6000 | Order Now |
DISTI #
SMC-CSD19538Q3A
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Sensible Micro Corporation | OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 5000 |
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RFQ | |
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Cytech Systems Limited | MOSFET N-CH 100V 15A 8VSON | 2500 |
|
RFQ | |
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Greenchips | Date Code: NA/CN | 800 |
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$0.0742 / $0.1317 | Buy Now |
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Greenchips | Date Code: 2120/CN | 296 |
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$0.0792 / $0.1398 | Buy Now |
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Greenchips | Date Code: 21+/CN | 0 |
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$0.0792 / $0.1398 | Buy Now |
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Greenchips | Date Code: 2130/CN | 0 |
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$0.0792 / $0.1398 | Buy Now |
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LCSC | 100V 15A 49m10V5A 2.8W 3.2V 1 N-channel VSONP-8(3.1x3.1) MOSFETs ROHS | 38 |
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$0.3125 / $0.4981 | Buy Now |
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Vyrian | Transistors | 78301 |
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RFQ |
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CSD19538Q3A
Texas Instruments
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Datasheet
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CSD19538Q3A
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 61 mOhm 8-VSONP -55 to 150
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | VSONP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Date Of Intro | 2016-06-02 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 8.1 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.072 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 16.4 pF | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 23 W | |
Pulsed Drain Current-Max (IDM) | 36 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD19538Q3A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19538Q3A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
CSD19538Q3AT | Texas Instruments | $0.3279 | 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 61 mOhm 8-VSONP -55 to 150 | CSD19538Q3A vs CSD19538Q3AT |
A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the high-current paths short and use wide traces for the power lines. Decouple the device with a 10uF capacitor and a 100nF capacitor in parallel.
Use a thermal pad or thermal tape to attach the device to a heat sink or a metal plate. Ensure good airflow around the device and avoid blocking the airflow. The maximum junction temperature is 150°C.
A 10uF to 22uF X5R or X7R ceramic capacitor is recommended for the input. The capacitor should be placed as close to the VIN pin as possible.
Use a soft-start circuit or a current limiter to limit the inrush current. You can also use a NTC thermistor in series with the input to reduce the inrush current.
The maximum output capacitance is 220uF. Exceeding this value may cause instability or oscillations.