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Part Details for CSD19534Q5AT by Texas Instruments
Results Overview of CSD19534Q5AT by Texas Instruments
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
CSD19534Q5AT Information
CSD19534Q5AT by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD19534Q5AT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AH3846
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Newark | Mosfet, N-Channel, 100V, 50A, Vson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0126Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.8V, Power Rohs Compliant: Yes |Texas Instruments CSD19534Q5AT RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 263 |
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$2.5300 / $2.9900 | Buy Now |
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DISTI #
296-37838-1-ND
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DigiKey | MOSFET N-CH 100V 50A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3840 In Stock |
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$0.6625 / $1.6100 | Buy Now |
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DISTI #
595-CSD19534Q5AT
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Mouser Electronics | MOSFETs 100V NCh NexFET A 595-CSD19534Q5A RoHS: Compliant | 3313 |
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$0.6620 / $1.5800 | Buy Now |
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Bristol Electronics | 102 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 100V, 0.0176OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 81 |
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$17.5000 / $22.5000 | Buy Now |
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DISTI #
CSD19534Q5AT
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TME | Transistor: N-MOSFET, unipolar, 100V, 50A, 63W, VSONP8, 5x6mm Min Qty: 1 | 0 |
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$0.9000 / $1.5200 | RFQ |
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LCSC | 100V 44A 15.1m10V10A 3.4V 1 N-channel VSONP-8(5x6) MOSFETs ROHS | 83 |
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$1.5048 / $2.5344 | Buy Now |
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Vyrian | Transistors | 12042 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 100V 50A 8VSON | 8750 |
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$0.5036 / $0.7554 | Buy Now |
Part Details for CSD19534Q5AT
CSD19534Q5AT CAD Models
CSD19534Q5AT Part Data Attributes
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CSD19534Q5AT
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD19534Q5AT
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | VSONP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 55 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 44 A | |
| Drain-source On Resistance-Max | 0.0176 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7.4 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 137 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
CSD19534Q5AT Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
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Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a high-quality decoupling capacitor (e.g., 10uF) close to the device. Verify the output voltage (VOUT) is within the specified range (0.8V to 3.3V).
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A 10uF to 22uF ceramic capacitor (X5R or X7R dielectric) is recommended for input decoupling. Place the capacitor as close to the VIN pin as possible.
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The device has a built-in thermal shutdown feature that activates when the junction temperature exceeds 150°C. Ensure proper heat sinking and airflow to prevent overheating. If thermal shutdown occurs, the device will automatically recover when the temperature drops below 130°C.
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A 10uF to 22uF ceramic capacitor (X5R or X7R dielectric) is recommended for output filtering. Place the capacitor as close to the VOUT pin as possible.