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Part Details for CSD19534Q5A by Texas Instruments
Results Overview of CSD19534Q5A by Texas Instruments
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
CSD19534Q5A Information
CSD19534Q5A by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD19534Q5A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-43636-1-ND
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DigiKey | MOSFET N-CH 100V 50A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
11384 In Stock |
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$0.3526 / $1.1300 | Buy Now |
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DISTI #
595-CSD19534Q5A
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Mouser Electronics | MOSFETs N-Channel MOSFET A 595-CSD19534Q5AT RoHS: Compliant | 9459 |
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$0.3650 / $1.0600 | Buy Now |
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DISTI #
V72:2272_07248860
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Arrow Electronics | Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2326 Container: Cut Strips | Americas - 32 |
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$0.3886 / $0.6498 | Buy Now |
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DISTI #
86310458
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Verical | Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R Min Qty: 16 Package Multiple: 1 Date Code: 2326 | Americas - 32 |
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$0.3886 / $0.5465 | Buy Now |
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Bristol Electronics | 800 |
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RFQ | ||
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Bristol Electronics | Min Qty: 5 | 25 |
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$0.6825 / $1.0500 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 100V, 0.0176OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 640 |
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$1.5000 / $4.0000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 100V, 0.0176OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 21 |
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$0.5112 / $0.8520 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 100V, 0.0176OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 20 |
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$0.7000 / $1.4000 | Buy Now |
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DISTI #
CSD19534Q5A
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TME | Transistor: N-MOSFET, unipolar, 100V, 50A, 63W, VSONP8, 5x6mm Min Qty: 1 | 736 |
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$0.3590 / $0.9570 | Buy Now |
Part Details for CSD19534Q5A
CSD19534Q5A CAD Models
CSD19534Q5A Part Data Attributes
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CSD19534Q5A
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD19534Q5A
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | VSONP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 55 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 44 A | |
| Drain-source On Resistance-Max | 0.0176 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7.4 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 137 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for CSD19534Q5A
This table gives cross-reference parts and alternative options found for CSD19534Q5A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19534Q5A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD19534Q5AT | Texas Instruments | $1.9946 | 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150 | CSD19534Q5A vs CSD19534Q5AT |
| BSC159N10LSFG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0159ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | CSD19534Q5A vs BSC159N10LSFG |
Resources and Additional Insights for CSD19534Q5A
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-
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Hold-up time beyond 10 ms using flyback converter and smaller size reference design
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48V Input Synchronous Buck to 24V@12A (15A pk) Converter Reference Design
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1 - 5 of 39 reference designs
CSD19534Q5A Frequently Asked Questions (FAQ)
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The maximum SOA for the CSD19534Q5A is not explicitly stated in the datasheet. However, TI provides an SOA curve in the datasheet, which can be used to determine the maximum safe operating conditions. It's recommended to consult with TI's application notes and SOA calculation tools for more information.
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To ensure proper thermal management, follow TI's recommended thermal design guidelines, including using a heat sink with a thermal interface material, ensuring good airflow, and keeping the device within its recommended operating temperature range (–55°C to 150°C).
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The recommended gate drive voltage for the CSD19534Q5A is between 4.5V and 10V, with a typical value of 5V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
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To minimize EMI, follow best practices for PCB design, such as using a solid ground plane, minimizing loop areas, and using shielding or filtering components. Additionally, consider using a gate driver with built-in EMI mitigation features.
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The maximum allowed voltage transient for the CSD19534Q5A is not explicitly stated in the datasheet. However, TI recommends following the device's absolute maximum ratings and ensuring that the voltage transients do not exceed the maximum drain-source voltage (Vds) rating of 40V.