Datasheets
CSD19533KCS by: Texas Instruments

100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm 3-TO-220 -55 to 175

Part Details for CSD19533KCS by Texas Instruments

Results Overview of CSD19533KCS by Texas Instruments

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CSD19533KCS Information

CSD19533KCS by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for CSD19533KCS

Part # Distributor Description Stock Price Buy
DISTI # 296-37482-5-ND
DigiKey MOSFET N-CH 100V 100A TO220-3 Min Qty: 1 Lead time: 12 Weeks Container: Tube 1000
In Stock
  • 1 $1.6800
  • 50 $0.9720
  • 100 $0.9466
  • 500 $0.8219
  • 1,000 $0.7151
  • 2,000 $0.6973
  • 5,000 $0.6550
$0.6550 / $1.6800 Buy Now
DISTI # 595-CSD19533KCS
Mouser Electronics MOSFETs 100V 8.7mOhm N-CH Pw r MOSFET RoHS: Compliant 0
  • 1 $1.6800
  • 10 $1.2400
  • 50 $0.9720
  • 100 $0.9460
  • 500 $0.8210
  • 1,000 $0.6970
  • 5,000 $0.6550
$0.6550 / $1.6800 Order Now
DISTI # J56:1989_07678639
Arrow Electronics Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks Date Code: 2433 Europe - 16000
  • 1,000 $0.6914
  • 5,000 $0.6914
$0.6914 Buy Now
DISTI # V99:2348_07248856
Arrow Electronics Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2207 Americas - 100
  • 1 $0.8674
  • 10 $0.7419
  • 100 $0.7351
  • 500 $0.6914
$0.6914 / $0.8674 Buy Now
DISTI # CSD19533KCS
TME Transistor: N-MOSFET, unipolar, 100V, 100A, 188W, TO220-3 Min Qty: 1 184
  • 1 $1.8200
  • 3 $1.6000
  • 10 $1.4500
  • 25 $1.2500
  • 100 $1.0000
$1.0000 / $1.8200 Buy Now
LCSC 100V 100A 188W 10.5m10V55A 3.4V 1 N-channel TO-220 MOSFETs ROHS 46
  • 1 $2.6837
  • 10 $2.2709
  • 50 $2.0135
  • 100 $1.7485
  • 500 $1.6282
  • 1,000 $1.5764
$1.5764 / $2.6837 Buy Now

Part Details for CSD19533KCS

CSD19533KCS CAD Models

CSD19533KCS Part Data Attributes

CSD19533KCS Texas Instruments
Buy Now Datasheet
Compare Parts:
CSD19533KCS Texas Instruments 100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm 3-TO-220 -55 to 175
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description PACKAGE-3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 106 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0122 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 12.5 pF
JEDEC-95 Code TO-220
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 188 W
Pulsed Drain Current-Max (IDM) 207 A
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD19533KCS

This table gives cross-reference parts and alternative options found for CSD19533KCS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19533KCS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT10M11B2VFRG Microchip Technology Inc Check for Price Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET CSD19533KCS vs APT10M11B2VFRG
APT10M11B2VFRG Microsemi Corporation Check for Price Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 CSD19533KCS vs APT10M11B2VFRG
APT10M11B2VFR Microsemi Corporation Check for Price Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 CSD19533KCS vs APT10M11B2VFR

Resources and Additional Insights for CSD19533KCS

Reference Designs related to CSD19533KCS

  • High Efficiency 300W AC/DC Power Supply Reference Design
    PMP20367 is high-efficiency AC/DC power supply reference design with universal AC input and 55V/5.5A and 12V/1A outputs. LLC+PFC combo IC UCC29950 is applied for the main power stages with 55V/5.5A output while UCC28730 is applied for the auxiliary power with 12V/1A output.  This design has over 92.5% peak efficiency. 
  • High Efficiency 350W AC/DC Power Supply Reference Design
    PMP11303 is high-efficiency AC/DC power supply reference design with universal AC input and 25V/13.5A and 12V/1A outputs. LLC+PFC combo IC UCC29950 is applied for the main power stages with 25V/13.5A output while UCC28730 is applied for the auxiliary power with 12V/1A output. This design has low no load power comsumption (152mW@230VAC) and over 93% peak efficiency. This design also meet 80PLUS Gold requirement for 115VAC Internal power supplies.
  • Programmable ±100-V: High-Current: Floating Linear Regulator Reference Design for Ultrasound Systems
    Ultrasound transmitters require a stable programmable DC power source to drive high current into piezo transducers during the transmission. The TIDA-01371 reference design demonstrates a positive and negative linear regulator that can provide output voltages varying from ±2.5 to ±100V. The programmability (meant to come from a DAC) is implemented using external control voltages. The low-noise performance helps in replacing passive and active noise filters with off-the-shelf low-noise positive and negative LDO regulators and a circuit to float the ground of the regulators. In addition: it uses external power MOSFETs to scale the current capability of regulators to support special imaging modes such as shear wave: or elastography: mode. In order to provide extremely high currents to the transducers: large input capacitors can provide high energy for 1ms of duration keeping the average current drawn from this power supply very low.
  • PMP10088 ±12V/700mA 双路电源参考设计
    PMP10088 is a reference design which provides a dual output +12V and -12V from an industrial input voltage of 24V.
  • TIPD184 采用双极电源的 100A 闭环电流传感器参考设计
  • TIDA-01350 高速线性跨阻参考设计
    此高速线性跨阻放大器参考设计是一款高速线性二级跨阻放大器 (TIA) 应用,采用 LMH5401 全差动放大器 (FDA)。参考设计中包括具有集成式光纤尾纤的光电二极管。此随附的光电二极管可视为近乎理想的电流源,从而支持进行轻松测试。

CSD19533KCS Related Parts

CSD19533KCS Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the CSD19533KCS is -40°C to 150°C.

  • To ensure proper biasing, connect the gate-source voltage (VGS) to a voltage source that is within the recommended range (typically 4.5V to 10V) and ensure the drain-source voltage (VDS) is within the recommended range (typically 10V to 30V).

  • For optimal thermal performance, use a multi-layer PCB with a thermal pad connected to a heat sink or a thermal interface material. Ensure good thermal conductivity and minimize thermal resistance.

  • Use a voltage regulator or a voltage limiter to prevent overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

  • Use a gate drive circuit with a high-current capability (e.g., TC4420 or UCC37322) and ensure the gate drive voltage is within the recommended range (typically 10V to 15V).

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