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Part Details for CSD19532Q5B by Texas Instruments
Results Overview of CSD19532Q5B by Texas Instruments
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD19532Q5B Information
CSD19532Q5B by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD19532Q5B
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AH2105
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Newark | Mosfet, N Channel, 100V, 100A, Vson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.004Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.6V, Power Rohs Compliant: Yes |Texas Instruments CSD19532Q5B RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 242 |
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$2.0900 / $2.7000 | Buy Now |
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DISTI #
296-37478-1-ND
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DigiKey | MOSFET N-CH 100V 100A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3249 In Stock |
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$0.9996 / $2.5000 | Buy Now |
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DISTI #
595-CSD19532Q5B
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Mouser Electronics | MOSFETs 100V 4.0 mOhm N-Ch N exFET Power MOSFET A 595-CSD19532Q5BT RoHS: Compliant | 4398 |
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$0.9600 / $2.4500 | Buy Now |
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DISTI #
V72:2272_07248855
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Arrow Electronics | Trans MOSFET N-CH Si 100V 100A 8-Pin VSON-CLIP EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks Date Code: 2328 Container: Cut Strips | Americas - 690 |
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$1.0836 / $1.6356 | Buy Now |
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DISTI #
69712461
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Verical | Trans MOSFET N-CH Si 100V 100A 8-Pin VSON-CLIP EP T/R Min Qty: 6 Package Multiple: 1 Date Code: 2328 | Americas - 690 |
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$1.0836 / $1.6356 | Buy Now |
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Bristol Electronics | 187 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0057OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1754 |
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$1.2263 / $3.2700 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0057OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 149 |
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$3.7000 / $6.0000 | Buy Now |
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NexGen Digital | 2 |
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RFQ | ||
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LCSC | 100V 17A 4.6m6V17A 195W 2.6V SON-8(5x6) MOSFETs ROHS | 97 |
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$0.6595 / $1.2368 | Buy Now |
Part Details for CSD19532Q5B
CSD19532Q5B CAD Models
CSD19532Q5B Part Data Attributes
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CSD19532Q5B
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD19532Q5B
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm 8-VSON-CLIP -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | VSON-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 274 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0057 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 18 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 195 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for CSD19532Q5B
This table gives cross-reference parts and alternative options found for CSD19532Q5B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19532Q5B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD19532Q5BT | Texas Instruments | $1.3500 | 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm 8-VSON-CLIP -55 to 150 | CSD19532Q5B vs CSD19532Q5BT |
Resources and Additional Insights for CSD19532Q5B
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CSD19532Q5B Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a low-impedance path for the drain and source pins to the thermal pad.
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Ensure the gate-source voltage (Vgs) is within the recommended range (typically 4.5V to 10V) and the drain-source voltage (Vds) is within the absolute maximum rating (30V).
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The critical timing parameters include the turn-on and turn-off times (ton and toff), which are typically around 10-20 ns. Ensure the gate driver is capable of meeting these timing requirements.
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Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage spikes and excessive current. Use a voltage regulator and current sense resistors to monitor and limit the current.
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A high-current, low-output-impedance gate driver such as the UCC37322 or the LM5113 is recommended. Ensure the gate driver can provide the required peak current and has a low output impedance to minimize ringing.