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60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm 8-VSON-CLIP -55 to 175
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD18540Q5B by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Manufacturer | Description | Datasheet |
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CSD18540Q5BT | Texas Instruments | 60V, N ch NexFET MOSFET™, single SON5x6, 2.2mOhm 8-VSON-CLIP -55 to 175 | |
CSD18540Q5B | Texas Instruments | 60V, N ch NexFET MOSFET™, single SON5x6, 2.2mOhm 8-VSON-CLIP -55 to 175 |
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-41076-1-ND
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DigiKey | MOSFET N-CH 60V 100A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
17779 In Stock |
|
$0.9722 / $2.6300 | Buy Now |
DISTI #
595-CSD18540Q5B
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Mouser Electronics | MOSFETs 60V N-channel NexFE T Pwr MOSFET A 595-CSD18540Q5BT RoHS: Compliant | 23073 |
|
$0.9920 / $2.5800 | Buy Now |
DISTI #
J56:1989_08108954
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Arrow Electronics | Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks Date Code: 2421 | Europe - 5000 |
|
$0.9592 | Buy Now |
DISTI #
V72:2272_07248842
|
Arrow Electronics | Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks Date Code: 2340 Container: Cut Strips | Americas - 1434 |
|
$0.9592 / $2.3280 | Buy Now |
DISTI #
87796356
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Verical | Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R Min Qty: 7 Package Multiple: 1 Date Code: 2340 | Americas - 1434 |
|
$0.9592 / $2.3280 | Buy Now |
|
Bristol Electronics | Min Qty: 3 | 77 |
|
$1.5000 / $2.4000 | Buy Now |
|
Quest Components | 61 |
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$1.2000 / $3.2000 | Buy Now | |
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ComSIT USA | 60V N-CHANNEL NEXFET POWER MOSFET Power Field-Effect Transistor, 28A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 1391 |
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RFQ | |
DISTI #
CSD18540Q5B
|
Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 2128 |
|
$0.8610 / $2.5200 | Buy Now |
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CSD18540Q5B
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD18540Q5B
Texas Instruments
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm 8-VSON-CLIP -55 to 175
|
Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | VSON-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 320 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 20 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 188 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
The device requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 1-μF ceramic capacitor is recommended for CBYP. Additionally, the input voltage should be within the recommended operating range (4.5 V to 18 V).
The maximum allowed power dissipation for the CSD18540Q5B is 2.5 W. Exceeding this limit may cause the device to overheat and potentially fail.
The device has built-in overvoltage protection (OVP) and undervoltage lockout (UVLO) features. However, additional protection can be achieved by using external components such as a voltage supervisor or a reset IC.
The CSD18540Q5B is designed to operate at frequencies up to 1 MHz. Operating the device at frequencies above 1 MHz may affect its performance and stability.