Part Details for CSD17578Q3AT by Texas Instruments
Results Overview of CSD17578Q3AT by Texas Instruments
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
CSD17578Q3AT Information
CSD17578Q3AT by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD17578Q3AT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
296-38462-1-ND
|
DigiKey | MOSFET N-CH 30V 20A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4112 In Stock |
|
$0.4950 / $1.7700 | Buy Now |
|
DISTI #
595-CSD17578Q3AT
|
Mouser Electronics | MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD17578Q3A RoHS: Compliant | 788 |
|
$0.4950 / $1.7500 | Buy Now |
|
DISTI #
CSD17578Q3AT
|
TME | Transistor: N-MOSFET, unipolar, 30V, 20A, 37W, VSONP8, 3.3x3.3mm Min Qty: 1 | 461 |
|
$0.6700 / $1.3300 | Buy Now |
|
|
LCSC | 30V 20A 7.3m10V10A 1.9V 1 N-channel VSONP-8(3.3x3.3) MOSFETs ROHS | 5 |
|
$1.7124 / $2.4245 | Buy Now |
|
|
Vyrian | Transistors | 39647 |
|
RFQ |
Part Details for CSD17578Q3AT
CSD17578Q3AT CAD Models
CSD17578Q3AT Part Data Attributes
|
|
CSD17578Q3AT
Texas Instruments
Buy Now
Datasheet
|
Compare Parts:
CSD17578Q3AT
Texas Instruments
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.4 mOhm 8-VSONP -55 to 150
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 24 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 54 A | |
| Drain-source On Resistance-Max | 0.0094 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 73 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 142 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for CSD17578Q3AT
This table gives cross-reference parts and alternative options found for CSD17578Q3AT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD17578Q3AT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD17578Q3A | Texas Instruments | $0.2813 | 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.4 mOhm 8-VSONP | CSD17578Q3AT vs CSD17578Q3A |
CSD17578Q3AT Frequently Asked Questions (FAQ)
-
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
-
Ensure the input voltage (VIN) is within the recommended range (1.5V to 5.5V). Use a stable voltage regulator and decouple the input with a 1uF capacitor. Also, ensure the enable pin (EN) is properly biased to the recommended voltage (VIN or GND).
-
A 1uF to 10uF X5R or X7R ceramic capacitor is recommended for input decoupling. The capacitor should be placed as close to the device as possible.
-
Ensure the input voltage (VIN) is applied before the enable pin (EN) is asserted. Also, ensure the output voltage (VOUT) is stable before connecting the load.
-
Keep the device and its associated components away from noise-sensitive areas. Use a ground plane and shielded cables to minimize radiation. Ensure the device's pins are not routed near noise-sensitive signals.