Datasheets
CSD17510Q5A by:

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.2 mOhm 8-VSONP -55 to 150

Part Details for CSD17510Q5A by Texas Instruments

Results Overview of CSD17510Q5A by Texas Instruments

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CSD17510Q5A Information

CSD17510Q5A by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for CSD17510Q5A

Part # Distributor Description Stock Price Buy
DISTI # 296-27792-1-ND
DigiKey MOSFET N-CH 30V 20A/100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4694
In Stock
  • 1 $1.7000
  • 10 $1.1170
  • 100 $0.7465
  • 500 $0.5893
  • 1,000 $0.5388
  • 2,500 $0.4841
  • 5,000 $0.4503
  • 7,500 $0.4410
$0.4410 / $1.7000 Buy Now
DISTI # 595-CSD17510Q5A
Mouser Electronics MOSFETs 30V NChannel Lo Side NexFET Pwr MOSFET A 595-CSD17577Q5A RoHS: Compliant 5028
  • 1 $1.6700
  • 10 $1.1200
  • 100 $0.7420
  • 500 $0.5890
  • 1,000 $0.5310
  • 2,500 $0.4820
  • 5,000 $0.4500
$0.4500 / $1.6700 Buy Now
LCSC 30V 5.2m10V20A 3W 2.1V 1 N-channel VSONP-8(5x6) MOSFETs ROHS 19
  • 1 $0.9279
  • 10 $0.9158
  • 30 $0.9068
  • 100 $0.8977
$0.8977 / $0.9279 Buy Now
Vyrian Transistors 118490
RFQ

Part Details for CSD17510Q5A

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CSD17510Q5A Part Data Attributes

CSD17510Q5A Texas Instruments
Buy Now Datasheet
Compare Parts:
CSD17510Q5A Texas Instruments 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.2 mOhm 8-VSONP -55 to 150
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 55 A
Drain-source On Resistance-Max 0.0073 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 66 pF
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 129 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD17510Q5A

This table gives cross-reference parts and alternative options found for CSD17510Q5A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD17510Q5A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SIS472DN-T1-GE3 Vishay Intertechnologies $0.3844 Power Field-Effect Transistor, 20A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8 CSD17510Q5A vs SIS472DN-T1-GE3
CSD17309Q3 Texas Instruments $0.5576 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm 8-VSON-CLIP -55 to 150 CSD17510Q5A vs CSD17309Q3
SIS472DN-T1-GE3 Vishay Siliconix Check for Price TRANSISTOR 20 A, 30 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power CSD17510Q5A vs SIS472DN-T1-GE3

Resources and Additional Insights for CSD17510Q5A

Reference Designs related to CSD17510Q5A

CSD17510Q5A Related Parts

CSD17510Q5A Frequently Asked Questions (FAQ)

  • A good PCB layout for the CSD17510Q5A involves keeping the high-frequency signals away from the power supply lines, using a solid ground plane, and minimizing the length of the traces. TI provides a recommended PCB layout in the datasheet and application notes.

  • To ensure proper biasing, follow the recommended biasing circuit in the datasheet, and make sure the input voltage is within the specified range. Also, ensure the output is properly terminated, and the device is operated within the recommended temperature range.

  • The CSD17510Q5A has a maximum junction temperature of 150°C. To prevent overheating, ensure good airflow around the device, use a heat sink if necessary, and follow the recommended thermal design guidelines in the datasheet.

  • To troubleshoot issues, start by verifying the PCB layout and biasing circuit. Check for proper termination, and ensure the input and output signals are within the specified ranges. Use oscilloscopes and signal analyzers to identify the source of the issue, and consult the datasheet and application notes for guidance.

  • The CSD17510Q5A has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. Use ESD-safe materials, and ensure the device is properly grounded during handling.

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