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25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm 8-VSON-CLIP -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD16340Q3 by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-25646-1-ND
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DigiKey | MOSFET N-CH 25V 21A/60A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$0.4113 / $1.6800 | Buy Now |
DISTI #
595-CSD16340Q3
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Mouser Electronics | MOSFETs N Channel NexFET Pow er MOSFET A 595-CSD16340Q3T RoHS: Compliant | 0 |
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$0.4600 / $1.6800 | Order Now |
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Bristol Electronics | 2448 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 21A I(D), 25V, 0.0078OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1958 |
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$0.5353 / $1.5295 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 21A I(D), 25V, 0.0078OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 108 |
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$0.7648 / $1.5295 | Buy Now |
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NexGen Digital | 4 |
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RFQ | ||
DISTI #
SMC-CSD16340Q3
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Sensible Micro Corporation | OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 300 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 50 |
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$0.6500 / $1.0000 | Buy Now |
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LCSC | 25V 60A 3.8m8V20A 0.85V 1 N-channel VSON-CLIP-8(3.3x3.3) MOSFETs ROHS | 19 |
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$0.3604 / $0.6499 | Buy Now |
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Vyrian | Transistors | 6154 |
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RFQ |
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CSD16340Q3
Texas Instruments
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Datasheet
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CSD16340Q3
Texas Instruments
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm 8-VSON-CLIP -55 to 150
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | SON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 21 A | |
Drain-source On Resistance-Max | 0.0078 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 69 pF | |
JESD-30 Code | S-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Pulsed Drain Current-Max (IDM) | 115 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD16340Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD16340Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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CSD16327Q3T | Texas Instruments | $0.5807 | 25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.8 mOhm 8-VSON-CLIP -55 to 150 | CSD16340Q3 vs CSD16327Q3T |
CSD16322Q5 | Texas Instruments | $0.8805 | 25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm 8-VSON-CLIP -55 to 150 | CSD16340Q3 vs CSD16322Q5 |
CSD16322Q5C | Texas Instruments | Check for Price | DualCool N-Channel NexFET Power MOSFET 8-VSON-CLIP 0 to 0 | CSD16340Q3 vs CSD16322Q5C |
IRFHM4234TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, | CSD16340Q3 vs IRFHM4234TRPBF |
A good PCB layout for the CSD16340Q3 involves keeping the high-current paths short and wide, using multiple vias to connect the thermal pad to a heat sink or a copper plane, and placing decoupling capacitors close to the device. TI provides a recommended PCB layout in the application note SLVAE73.
The input capacitor should be selected based on the input voltage, ripple current, and ESR requirements. A ceramic capacitor with a voltage rating of at least 1.5 times the maximum input voltage and a capacitance value between 4.7uF to 10uF is recommended. TI provides a capacitor selection guide in the application note SLVAE73.
The CSD16340Q3 has an operating temperature range of -40°C to 150°C. However, the device can be operated up to 175°C for a short duration during startup or fault conditions.
The CSD16340Q3 has a built-in overcurrent protection feature that can be enabled by connecting the OC pin to a resistor divider network. The resistor values should be selected based on the desired overcurrent threshold and the input voltage.
The recommended gate drive voltage for the CSD16340Q3 is between 4.5V to 15V. A higher gate drive voltage can improve the switching performance, but it may also increase the power consumption.