Datasheets
CSD16321Q5C by: Texas Instruments

DualCool™ N-Channel NexFET™ Power MOSFET 8-VSON-CLIP 0 to 0

Part Details for CSD16321Q5C by Texas Instruments

Results Overview of CSD16321Q5C by Texas Instruments

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

CSD16321Q5C Information

CSD16321Q5C by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for CSD16321Q5C

Part # Distributor Description Stock Price Buy
Vyrian Peripheral ICs 258
RFQ

Part Details for CSD16321Q5C

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CSD16321Q5C Part Data Attributes

CSD16321Q5C Texas Instruments
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CSD16321Q5C Texas Instruments DualCool™ N-Channel NexFET™ Power MOSFET 8-VSON-CLIP 0 to 0
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description SMALL OUTLINE, R-PDSO-N8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 218 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD16321Q5C

This table gives cross-reference parts and alternative options found for CSD16321Q5C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD16321Q5C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
CSD16321Q5 Texas Instruments $1.1373 25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm 8-VSON-CLIP -55 to 150 CSD16321Q5C vs CSD16321Q5

Resources and Additional Insights for CSD16321Q5C

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CSD16321Q5C Related Parts

CSD16321Q5C Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the CSD16321Q5C is -40°C to 150°C.

  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm.

  • The recommended input capacitor value for the CSD16321Q5C is 1uF to 10uF, with a voltage rating of 6.3V or higher.

  • Yes, the CSD16321Q5C is qualified for automotive and industrial applications, and is suitable for use in high-reliability systems.

  • The power dissipation of the CSD16321Q5C can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.

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