Part Details for CGHV59070P by MACOM
Results Overview of CGHV59070P by MACOM
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CGHV59070P Information
CGHV59070P by MACOM is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CGHV59070P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
1465-CGHV59070P-ND
|
DigiKey | RF MOSFET HEMT 50V 440170 Min Qty: 75 Lead time: 26 Weeks Container: Tray | Temporarily Out of Stock |
|
$420.0560 | Buy Now |
|
DISTI #
941-CGHV59070P
|
Mouser Electronics | GaN FETs 70W, GaN HEMT, DISCRETE TRANSISTOR, INTE | 0 |
|
$659.4500 | Order Now |
|
DISTI #
CGHV59070P
|
Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 25 | 0 |
|
$413.4600 | Buy Now |
Part Details for CGHV59070P
CGHV59070P CAD Models
CGHV59070P Part Data Attributes
|
|
CGHV59070P
MACOM
Buy Now
Datasheet
|
Compare Parts:
CGHV59070P
MACOM
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | M/A-COM TECHNOLOGY SOLUTIONS INC | |
| Reach Compliance Code | unknown | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 6.3 A | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Feedback Cap-Max (Crss) | 0.26 pF | |
| Highest Frequency Band | C BAND | |
| JESD-30 Code | R-CDFP-F2 | |
| JESD-609 Code | e4 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 15.55 dB | |
| Surface Mount | YES | |
| Terminal Finish | Gold/Nickel (Au/Ni) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM NITRIDE |
CGHV59070P Frequently Asked Questions (FAQ)
-
MACOM recommends a 4-layer PCB with a solid ground plane, and a thermal pad connected to a heat sink or a thermal via to ensure efficient heat dissipation. A minimum of 2 oz copper thickness is recommended for the top layer.
-
MACOM provides a recommended matching network topology in the application note. However, the optimal matching network design may vary depending on the specific application and frequency band. Engineers can use simulation tools like ADS or AWR to optimize the matching network for their specific use case.
-
The maximum safe operating temperature for the CGHV59070P is 150°C. Operating the device above this temperature can reduce its reliability and lifespan. Engineers should ensure that the device is operated within the recommended temperature range to ensure optimal performance and reliability.
-
To prevent oscillation and instability, engineers should ensure that the amplifier circuit is properly biased, and the input and output matching networks are optimized for stability. Additionally, the use of resistive loading or damping elements can help to prevent oscillation.
-
MACOM recommends a voltage-controlled biasing scheme for the CGHV59070P. The recommended bias voltage is 5V, and the quiescent current should be set to 200mA. The biasing scheme can affect the device's gain, efficiency, and linearity, so engineers should carefully follow the recommended biasing scheme to ensure optimal performance.