Part Details for CGHV31500F by Cree, Inc.
Results Overview of CGHV31500F by Cree, Inc.
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- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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CGHV31500F Information
CGHV31500F by Cree, Inc. is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for CGHV31500F
CGHV31500F CAD Models
CGHV31500F Part Data Attributes
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CGHV31500F
Cree, Inc.
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Datasheet
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CGHV31500F
Cree, Inc.
RF Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | CREE INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 125 V | |
| Drain Current-Max (ID) | 24 A | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 11.8 dB | |
| Surface Mount | NO | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM NITRIDE |
CGHV31500F Frequently Asked Questions (FAQ)
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A good PCB layout should have a solid ground plane, minimal trace lengths, and a thermal pad connected to a heat sink. Thermal management is critical, and a heat sink with a thermal conductivity of at least 1 W/m-K is recommended.
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To prevent oscillations, ensure that the device is biased correctly, and the input and output impedances are matched. A stability analysis using tools like S-parameters and load-pull analysis can help identify potential issues.
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The recommended drive and biasing conditions are typically provided in the application notes or design guides. For the CGHV31500F, a gate voltage of around 2-3V and a drain voltage of 28-30V are typical. However, the optimal biasing conditions may vary depending on the specific application and frequency of operation.
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The CGHV31500F can handle high voltage and current, but proper handling and safety precautions are essential. Ensure that the device is handled in a static-safe environment, and use proper ESD protection when handling the device.
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Wolfspeed provides reliability data and MTBF estimates for the CGHV31500F. The device is designed to meet high-reliability standards, with a typical MTBF of over 100,000 hours. However, the actual reliability and MTBF will depend on the specific application, operating conditions, and environmental factors.