Datasheets
C3D1P7060Q by:

Rectifier Diode, Schottky, 1 Phase, 1 Element, 9.7A, 600V V(RRM), Silicon Carbide, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERQFN-8

Part Details for C3D1P7060Q by Cree, Inc.

Results Overview of C3D1P7060Q by Cree, Inc.

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C3D1P7060Q Information

C3D1P7060Q by Cree, Inc. is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Part Details for C3D1P7060Q

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C3D1P7060Q Part Data Attributes

C3D1P7060Q Cree, Inc.
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C3D1P7060Q Cree, Inc. Rectifier Diode, Schottky, 1 Phase, 1 Element, 9.7A, 600V V(RRM), Silicon Carbide, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERQFN-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer CREE INC
Package Description QFN-8
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature PD-CASE
Application EFFICIENCY
Case Connection CATHODE
Configuration SINGLE
Diode Element Material SILICON CARBIDE
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.7 V
JESD-30 Code S-PDSO-N3
Non-rep Pk Forward Current-Max 12 A
Number of Elements 1
Number of Phases 1
Number of Terminals 3
Operating Temperature-Max 160 °C
Operating Temperature-Min -55 °C
Output Current-Max 9.7 A
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 35.5 W
Rep Pk Reverse Voltage-Max 600 V
Reverse Current-Max 15 µA
Reverse Test Voltage 600 V
Surface Mount YES
Technology SCHOTTKY
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

C3D1P7060Q Related Parts

C3D1P7060Q Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.

  • Ensure that the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C. Implement a thermal management system, such as a heat sink or fan, to maintain a safe operating temperature.

  • A gate drive circuit with a voltage swing of 15-20V and a current capability of 1-2A is recommended. The gate drive circuit should also include a gate resistor (Rg) of 10-20 ohms to dampen oscillations.

  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage spikes and excessive current. A fuse or circuit breaker can be used for OCP, while a zener diode or TVS diode can be used for OVP.

  • Wire bonding with a 1-mil aluminum wire or a gold wire is recommended. For soldering, use a solder with a melting point above 260°C and follow the recommended soldering profile to prevent thermal damage.

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