Part Details for C2M1000170J-TR by Cree, Inc.
Results Overview of C2M1000170J-TR by Cree, Inc.
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Robotics and Drones
Motor control systems
C2M1000170J-TR Information
C2M1000170J-TR by Cree, Inc. is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for C2M1000170J-TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 15 |
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$5.9062 / $7.8750 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 5.3A I(D), 1700V, 1.4OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET | 12 |
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$7.8750 / $10.5000 | Buy Now |
Part Details for C2M1000170J-TR
C2M1000170J-TR CAD Models
C2M1000170J-TR Part Data Attributes
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C2M1000170J-TR
Cree, Inc.
Buy Now
Datasheet
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Compare Parts:
C2M1000170J-TR
Cree, Inc.
Power Field-Effect Transistor, 5.3A I(D), 1700V, 1.4ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, D2PAK-7
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CREE INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G7 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-07-07 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1700 V | |
| Drain Current-Max (ID) | 5.3 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G7 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
Alternate Parts for C2M1000170J-TR
This table gives cross-reference parts and alternative options found for C2M1000170J-TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of C2M1000170J-TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| C2M1000170J | Wolfspeed | $8.1163 | MOSFET N-CH 1700V 5.3A TO247 | C2M1000170J-TR vs C2M1000170J |
C2M1000170J-TR Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
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Use a gold wire with a diameter of 0.7-1.0 mil (18-25 μm) and a bonding force of 2-5 grams. The bonding temperature should be between 150°C to 180°C. Ensure the bonding area is clean and free of oxidation.
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Store the devices in their original packaging or in a dry, ESD-protected environment. Avoid exposing the devices to moisture, direct sunlight, or extreme temperatures. Handle the devices by the package body, avoiding touching the leads or die.
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While the datasheet recommends using a specific gate driver, you can use a different gate driver as long as it meets the recommended gate drive voltage and current requirements. However, ensure the new gate driver is compatible with the device's switching characteristics and does not exceed the maximum ratings.
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Check the gate drive voltage, current, and frequency. Verify the device is properly soldered and the PCB layout is correct. Use an oscilloscope to monitor the device's switching waveforms and ensure they match the expected behavior. Consult the datasheet and application notes for troubleshooting guidelines.