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Part Details for C2M1000170D by Wolfspeed
Results Overview of C2M1000170D by Wolfspeed
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Robotics and Drones
Motor control systems
C2M1000170D Information
C2M1000170D by Wolfspeed is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for C2M1000170D
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
12X8366
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Newark | Sic Mosfet, N-Ch, 1.7Kv, 4.9A, To-247, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:1.7Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:20V, Power Dissipation:69W Rohs Compliant: Yes |Wolfspeed C2M1000170D RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$8.4400 / $11.8200 | Buy Now |
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DISTI #
C2M1000170D
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TME | Transistor: N-MOSFET, SiC, unipolar, 1.7kV, 4.9A, 69W, TO247-3, 20ns Min Qty: 1 | 106 |
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$6.7300 / $10.9700 | Buy Now |
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DISTI #
C2M1000170D
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Richardson RFPD | SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 1 | 0 |
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$5.8300 / $6.0900 | Buy Now |
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Win Source Electronics | 900 |
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$25.4546 / $38.1818 | Buy Now |
Part Details for C2M1000170D
C2M1000170D CAD Models
C2M1000170D Part Data Attributes
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C2M1000170D
Wolfspeed
Buy Now
Datasheet
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Compare Parts:
C2M1000170D
Wolfspeed
MOSFET N-CH 1700V 4.9A TO247
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | WOLFSPEED INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Wolfspeed | |
| Additional Feature | HIGH RELIABILITY | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1700 V | |
| Drain Current-Max (ID) | 4.9 A | |
| Drain-source On Resistance-Max | 1.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 5 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
C2M1000170D Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
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Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout. Also, derate the device's power handling capability according to the temperature derating curve in the datasheet.
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A gate driver with a high current capability (e.g., 2A) and a low output impedance is recommended. The gate drive circuitry should also include a resistor in series with the gate to limit the current and prevent oscillations.
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Use a voltage clamp or a zener diode to protect the device from overvoltage. For overcurrent protection, use a current sense resistor and a comparator or a dedicated overcurrent protection IC.
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Use a wire bonding technique with a 1-mil aluminum wire or a gold wire. For soldering, use a solder with a high melting point (e.g., 96.5Sn/3Ag/0.5Cu) and follow the recommended soldering profile to prevent thermal damage.