Part Details for BYM36E-TR by Vishay Semiconductors
Results Overview of BYM36E-TR by Vishay Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
BYM36E-TR Information
BYM36E-TR by Vishay Semiconductors is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for BYM36E-TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BYM36E-TR-ND
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DigiKey | DIODE AVALANCHE 1KV 1.5A SOD64 Min Qty: 12500 Lead time: 14 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.4050 | Buy Now |
Part Details for BYM36E-TR
BYM36E-TR CAD Models
BYM36E-TR Part Data Attributes
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BYM36E-TR
Vishay Semiconductors
Buy Now
Datasheet
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Compare Parts:
BYM36E-TR
Vishay Semiconductors
DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SEMICONDUCTORS | |
| Package Description | E-LALF-W2 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Application | GENERAL PURPOSE | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 1.28 V | |
| JESD-30 Code | E-LALF-W2 | |
| JESD-609 Code | e2 | |
| Moisture Sensitivity Level | 1 | |
| Non-rep Pk Forward Current-Max | 65 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Output Current-Max | 2.9 A | |
| Package Body Material | GLASS | |
| Package Shape | ELLIPTICAL | |
| Package Style | LONG FORM | |
| Rep Pk Reverse Voltage-Max | 1000 V | |
| Reverse Recovery Time-Max | 0.15 µs | |
| Surface Mount | NO | |
| Technology | AVALANCHE | |
| Terminal Finish | TIN SILVER | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL |
Alternate Parts for BYM36E-TR
This table gives cross-reference parts and alternative options found for BYM36E-TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BYM36E-TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BYM36E-TAP | Vishay Intertechnologies | $0.4203 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2.9A, 1000V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | BYM36E-TR vs BYM36E-TAP |
| BYM36E/33112 | NXP Semiconductors | Check for Price | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | BYM36E-TR vs BYM36E/33112 |
| BYM36E/30112 | NXP Semiconductors | Check for Price | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | BYM36E-TR vs BYM36E/30112 |
| BYM36E-TR | Vishay Intertechnologies | Check for Price | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2.9A, 1000V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | BYM36E-TR vs BYM36E-TR |
| BYM36E/33133 | NXP Semiconductors | Check for Price | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | BYM36E-TR vs BYM36E/33133 |
| BYM36E/20113 | NXP Semiconductors | Check for Price | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | BYM36E-TR vs BYM36E/20113 |
| BYM36E/50113 | NXP Semiconductors | Check for Price | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | BYM36E-TR vs BYM36E/50113 |
| BYM36E/20112 | NXP Semiconductors | Check for Price | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | BYM36E-TR vs BYM36E/20112 |
| BYM36E/21133 | NXP Semiconductors | Check for Price | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | BYM36E-TR vs BYM36E/21133 |
| BYM36E/40113 | NXP Semiconductors | Check for Price | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | BYM36E-TR vs BYM36E/40113 |
BYM36E-TR Frequently Asked Questions (FAQ)
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The recommended soldering temperature for BYM36E-TR is between 250°C to 260°C for a maximum of 10 seconds.
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Yes, the BYM36E-TR is suitable for high-frequency applications due to its low capacitance (CP) of 2.5 pF and low reverse recovery time (trr) of 50 ns.
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The maximum allowable power dissipation for BYM36E-TR is 500 mW at a temperature of 25°C.
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Yes, the BYM36E-TR is suitable for automotive applications as it meets the AEC-Q101 qualification standard for automotive-grade discrete semiconductors.
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The typical forward voltage drop (VF) for BYM36E-TR is 0.95 V at a forward current (IF) of 10 mA.