Part Details for BUZ80A by STMicroelectronics
Results Overview of BUZ80A by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BUZ80A Information
BUZ80A by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BUZ80A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 385 |
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RFQ |
Part Details for BUZ80A
BUZ80A CAD Models
BUZ80A Part Data Attributes
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BUZ80A
STMicroelectronics
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Datasheet
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BUZ80A
STMicroelectronics
3.8A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 3.8 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 55 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 100 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-on Time-Max (ton) | 290 ns |
Alternate Parts for BUZ80A
This table gives cross-reference parts and alternative options found for BUZ80A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ80A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUZ80A | onsemi | Check for Price | BUZ80A | BUZ80A vs BUZ80A |
| BUZ80A | Siemens | Check for Price | Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | BUZ80A vs BUZ80A |
| BUZ80A | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ80A vs BUZ80A |
BUZ80A Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the BUZ80A is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and maximum ratings. As a general guideline, the SOA is typically limited by the device's thermal resistance, maximum junction temperature, and maximum current ratings. It's recommended to consult with STMicroelectronics' application notes or contact their technical support for more information.
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To ensure the BUZ80A is properly biased, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Additionally, consider the following: ensure the input voltage is within the recommended range, use a suitable bias resistor to set the gate-source voltage, and provide a stable power supply with adequate decoupling. It's also important to consider the device's thermal characteristics and ensure proper heat sinking.
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For optimal performance and reliability, it's essential to follow good PCB layout practices and thermal management techniques when designing with the BUZ80A. This includes: using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal pad, using thermal vias to dissipate heat, and ensuring good airflow around the device. Consult with STMicroelectronics' application notes and PCB layout guidelines for more information.
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To protect the BUZ80A from electrostatic discharge (ESD), follow standard ESD precautions during handling and assembly. This includes: using an ESD wrist strap or mat, storing the devices in anti-static packaging, and avoiding direct contact with the device's pins. Additionally, consider adding ESD protection devices, such as TVS diodes or ESD protection arrays, to the PCB design to protect the BUZ80A from external ESD events.
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The reliability and failure rate expectations for the BUZ80A are not explicitly stated in the datasheet, but STMicroelectronics provides reliability data and failure rate estimates for their devices through various sources, such as their website, application notes, and reliability reports. It's recommended to consult with STMicroelectronics' technical support or reliability engineers to obtain more information on the BUZ80A's reliability and failure rate expectations.