Part Details for BUZ72A by Infineon Technologies AG
Results Overview of BUZ72A by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BUZ72A Information
BUZ72A by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BUZ72A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1450 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,9A I(D),TO-220AB | 1160 |
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$3.1350 / $6.2700 | Buy Now |
Part Details for BUZ72A
BUZ72A CAD Models
BUZ72A Part Data Attributes
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BUZ72A
Infineon Technologies AG
Buy Now
Datasheet
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BUZ72A
Infineon Technologies AG
Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 59 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for BUZ72A
This table gives cross-reference parts and alternative options found for BUZ72A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ72A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUZ72A | STMicroelectronics | Check for Price | 11A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | BUZ72A vs BUZ72A |
| BUZ72A | Thomson Consumer Electronics | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | BUZ72A vs BUZ72A |
BUZ72A Frequently Asked Questions (FAQ)
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The BUZ72A can operate from -55°C to 175°C, making it suitable for high-reliability applications.
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To ensure proper biasing, the BUZ72A requires a minimum of 10V on the gate-source voltage (VGS) and a maximum of 20V on the drain-source voltage (VDS). Additionally, the gate current (IG) should be limited to 100mA.
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To minimize parasitic inductance, it is recommended to use a compact PCB layout with short leads and a low-inductance package. The drain and source pins should be connected to a large copper area to reduce inductance. Additionally, the gate pin should be connected to a low-impedance source to minimize ringing.
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Yes, the BUZ72A is suitable for high-frequency applications up to 1GHz due to its low input capacitance (Ciss) and high switching speed. However, the user should ensure that the PCB layout and component selection are optimized for high-frequency operation.
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To protect the BUZ72A from ESD, it is recommended to handle the device with ESD-safe equipment and follow proper ESD handling procedures. Additionally, the user can add ESD protection devices, such as TVS diodes, to the PCB design.